銀對銻化鎵之接面特性

Junction characteristics of Ag contact on GaSb

劉哲維(Che-Wei Liu)

指導教授 ： 黃文昌

崑山科技大學/工程學院/電子工程研究所/碩士(2011年)

摘要

本論文探討銀/n-型銻化鎵蕭特基二極體之接觸特性，這個二極體經不同的溫度快速熱退火處理後，我們發現銀/銻化鎵蕭特基二極體在快速熱退火350 ℃、45秒後有較好的蕭特基特性。其飽和電流密度為1.29×10-3 A/cm2，能障高度為0.51eV，理想因子為1.39，且藉由諾得函數計算求得串聯電阻為4.56 KΩ。當熱退火溫度升高至400 ℃時，二極體的理想因子變大，且漏電流明顯的增加。在本研究中，同時也利用Cheung’s的函數分別計算能障高度及理想因子更深入探討蕭特基二極體的電氣特性。

關鍵字

蕭特基二極體 ； 銻化鎵 ； 能障高度

並列摘要

The contact characteristics of the Ag/n-GaSb diode were discussed in the paper. As the diode was prepared, it was annealed by rapid thermal annealing system at various of temperature. A best diode characteristic was obtained at 350 ˚C for 45 sec and showed a saturation current density of 1.29×10-3 A/cm2, a Schottky barrier height of 0.51 eV with an ideality factor of 1.39. The series resistance was 4.56 KΩ which was evaluated by Norde function. As the annealed temperature was increased to 400 ˚C, both the ideality factor and reverse leakage current was increased. For a further discussion of the electrical characteristics, the Cheung’s function was also used to evaluate the barrier height and ideality factor of the diode.

並列關鍵字

Schottky diodes ； GaSb ； Barrier height

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