本論文提出一種CMOS差動模式輸出參考電壓電路。本電路藉由適當的組合具有正溫度係數與負溫度係數的參數以完成具有零溫度係數的參考電壓。並基於傳統之能隙參考電壓電路架構加以改善,加入由電流鏡組成之與絕對溫度成正比的電流源。相較於已知電路,本論文提出之電路不需要使用運算放大器,具有架構簡單、較少晶片面積,與較低功率消耗等優點。本論文除了詳細敘述工作原理以外,並使用HSPICE與LAKER電路模擬軟體以0.35微米和0.18微米製程參數進行佈局前與佈局後模擬以及晶片實作。模擬結果顯示本論文所提出之差動模式輸出參考電壓電路,當供應電壓為3.3V,溫度變化從-20˚C遞增至120˚C時,輸出電壓變化是1.3mV(0.225%),功率消耗為2.354 mW,溫度係數為16.11 ppm/˚C。此外,若將差動模式輸出參考電壓電路中移除一個電晶體與一個電阻後,電路即變成一個單端輸出模式且具有零溫度係數的參考電壓。當供應電壓為2.8V,溫度變化從-20˚C遞增至120˚C時,輸出電壓變化是2.01mV(0.387%),功率消耗為1.412 mW,溫度係數為27.79 ppm/˚C。模擬結果與理論推導相符合,也證明電路的可行性。本論文所提出之CMOS差動模式輸出參考電壓電路可適用於各種類比積體電路。
In this thesis, a CMOS differential-mode reference voltage circuit has been proposed. By properly using the positive and negative temperature coefficient parameters, a zero temperature-coefficient can be achieved. The proposed circuits are based on the traditional bandgap voltage reference circuit architecture with an additional current mirror and a proportional-to-absolute-temperature current source which is composed of current mirrors. As compared with the existed differential-mode reference voltage circuit, the proposed circuit does not need an operational amplifier, therefore it benefits from simpler circuit architecture, less chip area, and less power consumption. Besides the detailed design principle, the HSPICE and LAKER simulation program with 0.35-um and 0.18-um process parameters have been used to perform the pre-layout and post-layout simulation. According to the post-layout simulation results, as the supply voltages is 3.3V, the differential-mode output voltage reference circuit shows that, as the temperature varies from -20oC to 120oC, the corresponding output voltage changes only 1.3mV(0.225%), the corresponding power dissipation is 2.354mW and the temperature-coefficient is 16.11 ppm/˚C. In addition, if a transistor and a resistor are removed from the proposed differential-mode output voltage reference circuit, a single-ended mode reference voltage with zero temperature coefficient can be obtained. According to the post-layout simulation results, when the supply voltages is 2.8V, and as the temperature varies from -20oC to 120oC, the corresponding output voltage changes only 2.01mV(0.387%), the corresponding power dissipation is 1.412mW and the temperature-coefficient is 27.79 ppm/˚C. All the simulation results are consistent with the theoretic analysis. The proposed circuits can be applied to different analog circuits.