透過您的圖書館登入
IP:34.230.35.103
  • 學位論文

氮化鋁-氧化鋅/氧化鋅/氮化鋁-氧化鋅雙異質接面及量子井結構之製作及特性研究

A Study on the Characteristics of AlN-ZnO/ZnO/AlN-ZnO Double Heterojunction and Quantum Wells Structure

指導教授 : 劉代山
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


本研究利用射頻磁控共濺鍍系統,分別利用氧化鋅、氮化鋁靶材,並以氮化鋁-氧化鋅共濺鍍薄膜作為阻障層,未摻雜氧化鋅薄膜作為活化層製作雙異質結構以及量子井結構,藉由改變不同主動層厚度,量測其結構之光電特性、光激發螢光發光特性、薄膜成分以及薄膜結晶構造,分析薄膜內部自由載子的形成機制與型態。研究結果顯示,氮化鋁-氧化鋅/氧化鋅/氮化鋁-氧化鋅雙異質結構以及量子井結構在真空熱退火後,平均穿透率均可達80%以上,由於氮化鋁-氧化鋅/氧化鋅界面處鋁原子擴散取代鋅原子,提供更多的電子載子,因此,與未摻雜氧化鋅相比,雙異質結構以及量子井結構之電子載子濃度有明顯提升,隨著井區厚度逐漸減少,阻障層中的鋁原子擴散情形越明顯,因此使輻射複合中心逐漸減弱並且往長波長紅移,進一步將短波長光激發螢光光譜進行擬合分析,可以發現當井區厚度從50 nm減少至7 nm時,擬合峰中的能帶邊緣放射約藍移了35 meV,主要是因為隨著井層厚度逐漸減少,量子侷限效應會越明顯,因此,產生藍移,且藍移大小與理論值計算結果相近,接著將氮化鋁-氧化鋅阻障層及未摻雜氧化鋅井層重複堆疊形成多重量子井結構,可以發現,多層結構能提供更多的位能井,使更多的電子與電洞被侷限於位能井區中,增加電子與電洞的復合數量,導致輻射複合放射峰強度隨著量子井的對數增加而有明顯的增強現象,而輻射複合放射峰位置隨著量子井的對數增加有先藍移再紅移的現象,主要是因為隨著量子井的對數增加,量子化效應更為明顯,當量子井的對數增加至十對時,由於過多的薄膜堆疊,導致結構中應力的大量累積,造成結晶特性變差,因而產生紅移現象。

並列摘要


In this study, the use of RF magnetron sputtering system, namely the use of zinc oxide, aluminum nitride target, AlN-ZnO cosputtered films as a barrier layer and an undoped ZnO film as a active layer to production double heterojunction and quantum well structure. Measurement optical and electrical properties of the structure, Optical characteristic, PL characteristic and crystallize,by changing the thickness of the different active layer .The results,AlN-ZnO/ZnO/AlN-ZnO double heterojunction and quantum well structure after vacuum annealing, the average penetration can be more than 80%. The AlN-ZnO/ZnO interface of the diffusion of aluminum atoms substituted with a zinc atom, the electron carrier to provide more,therefore, compared with the non-doped zinc oxide, double heterostructures and quantum well structure electron carrier concentration has improved significantly. With the well thickness reduction,the barrier layer of aluminum atoms diffuse the situation more obvious,thus the radiative recombination centers gradually weakened and towards long-wavelength red shift. Further short-wavelength photoluminescence spectrum fitting analysis can be found when the well region thickness is reduced from 50 nm to 7 nm, the peak fitting band edge radiation in the blue-shift of about 35 meV, mainly because with the well layer thickness decreases, the quantum confinement effect will be more obvious, therefore, to produce a blue shift and blue shift size similar results with the theoretical values calculated. Then,the AlN-ZnO barrier layer and undoped ZnO well layer are repeatedly stacked to form multiple quantum well structure. It can be found, the multilayer structure can provide more potential wells, so that more electrons and holes are confined potential well zones, increasing the number of electrons and holes complex, leading to radiative recombination radiation peak intensity with quantum wells periods to increase of phenomena which have significantly enhanced. The radiative recombination radiation peak positions with increasing of quantum wells periods have blue shift and then redshift phenomenon, mainly because with increasing of quantum wells periods, quantum effects are more apparent when the periods of quantum wells increase to ten periods, due to excessive film stack, resulting in a large accumulation of stress in the structure, resulting in crystallization characteristics deteriorate, resulting redshift.

參考文獻


【23】 黃瑞皓,利用氮化鋁-氧化鋅與氧化鎂-氧化鋅共濺鍍薄膜製作雙異質接面結構之特性研究”,國立虎尾科技大學光電與材料科技研究所碩士論文 (2012).”
【24】 A.K. Sharma, J. Naryana, J.F. Muth, C.W. Teng, C. Jin, A.Kvit, R.M. Lkolbas, O.W. Holland, Appl. Phys. Lett. 75 (1999).
【1】 K. L. Chopra ,S. Major, and D. K. Pandya, “Transparent conductors-A status review”, Thin Solid Films,Vol.102,pp.1-46(1983).
【2】 D. C. Look, “Recent advances in ZnO materials and devices ”,Mater. Sci.
【3】 D.S. Liu,C.S. Sheu, “Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system.”, J. Appl. Phys. , 102,(2007).

被引用紀錄


許凱強(2016)。改善氮化鋁-氧化鋅/氧化鋅量子井結構應用於發光二極體之研究〔碩士論文,國立虎尾科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0028-0908201614293800
林泓均(2017)。具侷限層之氮化鋁-氧化鋅/氧化鋅量子井結構應用於氧化鋅/氮化鎵發光二極體之研究〔碩士論文,國立虎尾科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0028-2107201716354700

延伸閱讀