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  • 學位論文

以電漿增強化學氣相法製備多對有機/無機 水氣阻障層之研究

A Study on The Preparation of Organic/inorganic Multilayered Barrier Structures Using Plasma Enhanced Chemical Vapor Deposition

指導教授 : 劉代山
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摘要


本研究利用電漿增強化學氣相沉積系統,製備無機氧化矽薄膜並建立最佳化阻水氣特性之製程參數,接著,利用有機矽基薄膜及無機氧化矽薄膜,堆疊多層結構的方式製備出有機/無機多層薄膜以提高塑膠基板的阻水氣滲透,藉由有機/無機多層氣體阻障層來提升有機發光二極體(organic light emitting diode, OLED)壽命,研究結果顯示,當多層結構採用最佳化三對有機/無機多層水氣阻障層時,相較於無機氧化矽薄膜,其薄膜內殘留應力可以從392 MPa下降至229 MPa,且藉由百格附著度測試薄膜可以發現,其薄膜附著度在PET塑膠基板上達到5B等級,顯示最佳化三對有機/無機多層水氣阻障層可以有效釋放有機/無機多層結構的應力累積,其水氣滲透率即可達到商用MOCON水氣滲透率機台的量測極限(1×10-2 g/m2/day),藉由有機/無機多層水氣阻障層薄膜進行有機發光二極體封裝製程,相較未封裝有機發光二極體,其壽命可以從4 hr提升至50 hr,因此,從上述實驗結果可以發現,顯示出藉由具有低應力之多對有機/無機多層水氣阻障層結構更能有效地提升可撓式塑膠基板的氣體滲透阻隔性及提升有機發光二極體壽命的能力。

並列摘要


We develop novel thin-film encapsulation technology using an organosilicon/silicon oxide(SiOx) multilayer barrier structure to improve the water vapor permeation of flexible plastic substrates. The inorganic SiOx films as a function of film thickness were deposited on the polyethylene terephthalate (PET) substrate by plasma-enhanced chemical vapor deposition (PECVD) using precursors of tetramethylsilane (TMS) and oxygen gas mixture.The water vapor transmission rate (WVTR) of the PET substrate significantly decreased from 3.8 to 0.34 g/m2/day after surface coating of a 300 nm-thick SiOx film. The WVTR of the PET substrate was further improved by insetting a plasma-polymerized organosilicon film using only the TMS monomer. Such an organosilicon film abundant in hydrophobic C-H functional group and cross-linking Si-C structure function to release the internal residual stress in the SiOx film during deposition as a consequence of the improvement on the film adhesion. The lower residual stress in the multilayer barrier structure, the better of the SiOx film free from pinholes and microcracks, resulting in 82% decrease in the WVTR than that of the SiOx film directy deposited onto the PET substrate. Accordingly, the developed multilayer barrier structure was able to effectively improve the permeability by using the pairs of organosilicon/ SiOx barrier structure on the PET substrate led to a low WVTR value below the MOCON detection limit (<0.01 g/m2/day).

參考文獻


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