AZO透明導電膜濺鍍靶材之製備與性質研究

Preparation and Properties of AZO Sputtering Target

蘇毓翔(Yu Hsiang Su)

指導教授 ： 吳明偉

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2012年)

https://doi.org/10.6827/NFU.2012.00151

摘要

近年來學界與業界皆積極發展替代ITO的透明導電薄膜材料，其中以ZnO基的材料最具潛力，而又以AZO性質最為優異，故受到廣泛研究。但目前相關研究皆僅集中在探討濺鍍參數對薄膜性質之影響，甚少研究深入探討濺鍍靶材特性對薄膜性質之影響，以及濺鍍靶材之製備與特性等相關研究。故本研究針對AZO進行分析，透過顯微組織觀察與電性檢測，詳細探討燒結溫度對AZO之緻密化、結晶結構、晶粒大小與電學性質之影響，同時亦將本研究與先前文獻之AZO靶材或薄膜性質結果進行討論，以釐清靶材與薄膜間之關聯性與特性差異。

結果顯示AZO靶材會在燒結溫度達到1000℃以下生成ZnAl2O4尖晶石相，從而改變整體顯微結構與結晶特性，導致燒結密度與電性的改變。AZO靶材在燒結過程中，其密度會隨燒結溫度提升而上升，當燒結溫度達1500℃時有最高之相對密度(98.8%)。而在電性質上AZO靶材之電阻率會隨燒結溫度提升而降低，其最佳數值為燒結溫度1500℃時之1.93×10-03Ωcm，載子濃度則會隨燒結溫度提升而增加，其最佳數值為燒結溫度1300℃時之4.17×1019 cm-3，而霍爾遷移率也會隨燒結溫度提升而增加，而其最佳數值則為燒結溫度1400℃時之65.6cm2/Vs。最後將本研究AZO靶材所得之結果與文獻中之AZO薄膜電性質進行比較後，可發現雖然AZO薄膜與靶材之電阻率相近，但薄膜之載子濃度會較靶材的數值來的高，而霍爾遷移率卻是靶材所得的數值較薄膜的高。

關鍵字

AZO ； 顯微結構 ； 電學性質 ； 濺鍍靶材 ； 燒結

並列摘要

The alternatives to ITO are extensively developed in academia and industry recently. Aluminum-doped zinc oxide (AZO) is regarded as the potential substitute for ITO, due to its versatility. Unfortunately, most researches focused on the effects of, The influences of sputtering targets on the performances of films sputtered are rarely highlighted. Furthermore, the correlation between the target properties and film performance and how to prepare high-quality sputtering targets have been neglected. Thus, this study investigated the effects of sintering temperatures on the densification, microstructure, and electrical properties of AZO target. To correlate the properties of AZO targets and films, the properties of AZO targets was also compared with those of AZO films in the literatures.

The results showed that the 2wt% Al2O3 additive in ZnO resulted in higher sintered density, finer grain size, and better electrical properties. When the sintering temperatures was higher than 1000℃, ZnAl2O4 spinel precipitates will form and inhibit the grain growth and promote the densification. The sintered densities of AZO were improved with increasing the sintering temperature. After 1500℃ sintering, the highest sintered density of AZO target achieved was 98.8%. Both the carrier concentration and Hall mobility of AZO targets were improved with increasing the sintering temperature. The resisitivity was imporved to 1.93×10-3Ωcm after 1500℃ sintering. Furthermore, The comparison between the properties of AZO targets and AZO films indicated that AZO targets exhibit higher Hall mobility and lower carrierconcentration than AZO films do, though their resistivities are similar.

並列關鍵字

AZO ； microstructure ； electrical property ； sputtering target ； sintering

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