矽奈米柱太陽能電池之光伏特性研究

本論文利用氣液固法(Vapor-liquid-solid, VLS)及濕式蝕刻法(Wet etching)製作矽奈米柱(silicon nanorod, SNRs)並應用於太陽能電池元件，首先藉由氣液固法改變不同參數的氣體流量、(SH4/N2/H2)之混成氣體比例、成長壓力、成長時間及成長溫度等製程條件成長矽奈米柱應用於薄膜太陽能電池。電池結構為Al/P+-SNRs/I-type poly-Si/n+-type poly-Si/oxide/test wafer。同時利用硝酸銀濕式蝕刻液蝕刻矽奈米柱，藉由改變不同濃度的AgNO3/HF/H2O混合蝕刻液及蝕刻時間製作不同大小維度的矽奈米柱，實驗結果顯示，經由VLS法成長的SNR其長度約為2μm，直徑約為180nm，將其做在薄膜多晶矽上其電池轉換效率為0.005%。在利用硝酸銀蝕刻液方面，隨著硝酸銀的濃度增加其奈米柱長度越長，且其形貌為不規則狀。在藉由調配不同的溶液蝕刻深度、擴散的時間及溫度等條件下所製作出之Al/Si3N4/N+-SNRs/P+-SNRs/P-type Si(100)/Al太陽能電池，其轉換效率為6.3%。

關鍵字

氣液固相法；硝酸銀蝕刻；矽奈米柱；太陽能電池

並列摘要

In this thesis, the silicon nanorods (SNRs) were grown by chemical-vapour deposition via the gold-catalysed vapour–liquid–solid (VLS) method and the wet etching technique on a p-type silicon substrate. By modulated the various ambient flow, growth temperature and time, the SNRs can be achieved for the silicon solar cell applications. A SNRs solar cell fabricated with simplicity and low cost of the wet chemical etching technique was also demonstrated. The results indicate that the SNR with a diameter less than 1 ?m formed on Au/Si(100) stack structures. The conversion efficiency of around 0.005 %, a current density (Jsc) of 0.1 mA/cm2, and a Voc of 0.1mV were obtained. The length of SNRs increase with increasing the AgNO3 concentration in AgNO3/HF/H2O mixed solution. Non-regularly morphology of SNRs was demonstrated by using the p-type silicon substrate etching in AgNO3/HF/H2O mixed solution. By modulated the etching time, diffusion temperature and time, Al/Si3N4/N+-SNRs/P+-SNRs/P-type Si(100)/Al solar cell with the conversion efficiency of 6.3% was demonstrated.