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  • 學位論文

高導電性與高穿透率銀奈米粒子散佈氧化鋅薄膜之研究

Study on High Conductive and Transparent Ag/ZnO

指導教授 : 雷伯薰
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摘要


本篇論文中,使用雙電漿輔助有機金屬化學氣相沉積(DPEMOCVD)設備在低溫下成長的氧化鋅(ZnO)薄膜,其平均透光率為87%,電阻率為6.94 Ωcm。再以液相沉積法,成長銀奈米粒子於氧化鋅薄膜上。分析不同硝酸銀、氫氧化鈉濃度、不同沉積時間、不同退火溫度、不同退火時間,對氧化鋅薄膜特性之影響。硝酸銀最佳濃度為0.12M在退火時間為三分鐘與溫度500℃,銀奈米粒子散布氧化鋅之電阻率為2.74×10-3 Ωcm,平均穿透率82%,薄膜優點係數為1.30×10-5Ω-1,在XRD分析中所成長的銀散布氧化鋅薄膜中擁有氧化鋅(002)峰值與銀(200)峰值。使用氫氧化鈉可使銀還原反應速率加快,最佳氫氧化鈉濃度為0.025M,在退火時間為三分鐘與溫度500℃時,可使電阻率達到6.98×10-4 Ωcm,且穿透率為80.7%,薄膜優點係數為373×10-5Ω-1。 最後我們將銀散布氧化鋅薄膜應用於光電元件上,當做氮化銦鎵/氮化鎵發光二極體的透明導電層(TCL)與有機發光二極體上。並與使用銦錫氧化物(ITO)當氮化銦鎵/氮化鎵發光二極體的透明導電層與有機發光二極體陽極作比較,結果顯示氮化銦鎵/氮化鎵發光二極管與有機發光二極體的不論在銀散布氧化鋅薄膜或是銦錫氧化物上皆呈現相近的光學和電學特性,表示使用DPEMOCVD系統與液相沉積法成長出的銀散布氧化鋅薄膜可以代替銦錫氧化物當作氮化銦鎵/氮化鎵發光二極體的透明導電層使用。

並列摘要


In this article, we have reported on the low-temperature-grown zinc oxide (ZnO) grown by dual-plasma-enhanced metal organic chemical vapor deposition (DPEMOCVD) facility. The ZnO grown on sapphire at 185 oC . A transmittance of 87 %, and resistivity of 6.94 Ωcm. Then deposition of silver nanoparticles on top of the zinc oxide thin films by liquid phase deposition. Analysis of different concentrations of silver nitrate and sodium hydroxide, different deposition time, different annealing temperatures, different annealing time. The optimum concentration of 0.12M silver nitrate and an annealing temperature 500 oC and six minute . A transmittance of 82 % and resistivity of 2.74×10-3 Ωcm, the film coefficient 1.30×10-5Ω-1. The XRD analysis of the growth of Ag/ZnO film has a (002) peak of the silver (111) peak. Silver reduction using sodium hydroxide can accelerate the reaction rate, the optimal concentration of 0.025M sodium hydroxide at 500 oC annealing temperature and six minute, the resistivity can reach 6.98×10-4 Ωcm, and transmittance of 80.7%. Finally, we apply the Ag/ZnO thin film to InGaN/GaN light-emitting diode as the transparent conductive layer (TCL). As compared to the InGaN/GaN LEDs with indium-tin-oxide (ITO) TCL, the InGaN/GaN LEDs with Ag/ZnO thin film present the same optical and electrical characteristics, indicating that the Ag/ZnO thin film grown by DPEMOCVD system can be a candidate for TCL in InGaN/GaN LEDs. Keywords:DPEMOCVD; Liquid phase deposition; Ag/ZnO

並列關鍵字

DPEMOCVD Liquid phase deposition Ag/ZnO

參考文獻


[1] K. Ellmer and A. Klein, 2008, “ZnO and Its Applications”, Springer Series in Materials Science, Vol.104 pp.1-33.
[2] Ziqiang Xu, et al., 2005, “Photoconductive UV Detectors Based on ZnO Films Prepared by Sol-Gel Method”, Journal of Sol-Gel Science and Technology, Vol.36 pp.223-226.
[3] Yukio Yoshino, et al., 2006, “Zinc Oxide Piezoelectric Thin Films for Bulk Acoustic Wave Resonators”, Murata Manufacturing Co.
[4] Pu Xian Gao and Zhong L. Wang, 2005, “Nanoarchitectures of semiconducting and piezoelectric zinc oxide”, Journal of Applied Physics, Vol.97 044304 .
[5] Ying He, et al., 2010, “Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate”, Journal of Nanoparticle Research,Vol.12 pp.169-176.

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