以金屬靶反應性磁控共濺鍍製備Cu3Ge薄膜於矽基板之熱穩定性研究

Preparation and Thermal Stability of the Cu3Ge film on Si Substrate by Reactive Magnetron Co-sputtering Using Copper and Germanium Metallic Targets

蔡銓洊(cyuan-jian cai)

指導教授 ： 方昭訓

共同指導教授 ： 李景恆(Jiing-Herng Lee)

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2012年)

https://doi.org/10.6827/NFU.2012.00235

摘要

本實驗中利用磁控共濺鍍系統製備Cu3Ge薄膜。實驗以Cu與Ge金屬靶進行Cu3Ge薄膜製備，隨後在氮氣氣氛中經600℃ 熱處理 20分鐘可得最低電阻值為12 μΩcm。在矽基板上也可穩定至600℃熱處理3分鐘電阻率降至17μΩcm。在大氣環境底下兩個星期，電阻值仍保持穩定，顯示出優異的抗氧化特性。相較於純銅薄膜，Cu3Ge薄膜在矽基板上有更高的熱穩定性與抗氧化特性。XRD結構分析初鍍膜即出現Cu3Ge。經由AES分析得知薄膜中鍺會抑制銅和矽產生Cu3Si，且形成Cu3Ge結構有助於阻擋氧進入薄膜中造成薄膜劣化。薄膜之熱穩定性與晶體結構利用X光繞射(XRD)分析與穿隧式電子顯微鏡(TEM)、X光光電子能譜儀(XPS)與歐傑電子能譜儀(AES)決定。電阻率利用四點探針量測。Cu3Ge薄膜的漏電流則利用電流對電壓(I-V)圖決定。

關鍵字

銅鍺合金 ； 共濺鍍

並列摘要

The copper-gemanide (Cu3Ge) formation process is enabled by magnetron co-sputter deposition process at room temperature. Whoever, follow annealed in an nitrogen atmosphere, the resistivity can be as low as 12 μΩcm, at 600℃ for 20 min, by the way on the Si substrate copper-gemanide also achieve 17μΩcm , and stable under the atmospheric environment tow week. which show a high thermal stability and antioxidant on Si substrates compared to Cu. We report a first observation of Cu3Ge structural in as-dep from XRD measurement. The thermal stability and crystal structures of Cu3Ge thin films were characterized by X-ray diffraction (XRD) ,transmission electron microscopy (TEM). X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The resistivity were determine by four-point probe measurements. The leakage current of the Cu3Ge were obtained by current-voltage (I-V) curves.

並列關鍵字

copper-gemanide ； co-sputter

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