以阻抗特性量測來分析半導體發光元件之微分載子生命期

本論文致力於建立一阻抗分析技術，藉此得知發光元件的微分載子生命期，進而推得主動層中的Shockley–Read–Hall（SRH）復合係數、輻射復合係數以及歐傑復合係數。我們研究三種不同波段的雷射二極體，分別為：成長在磷化銦（InP）基板上，發光波長為1.5 μm的量子井雷射；成長在砷化鎵（GaAs）基板上，發光波長為1.3 μm的啁啾式堆疊量子點雷射；以及成長在藍寶石（sapphire）基板上，發光波長為430 nm的量子井雷射。我們先量測這三種樣品在不同偏壓電流下的元件阻抗，頻率範圍介於1 MHz ~ 500 MHz，接著以適當的電路模型，經擬合分析後萃取出樣品主動層的各種復合係數，實驗結果與文獻上的數值都相當接近。本研究建立了可靠的阻抗分析技術，未來將可應用在新材料或新型結構的發光元件。

關鍵字

半導體雷射；發光二極體；微分載子生命期；阻抗；復合係數

並列摘要

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At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firssubstrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. 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The The derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, a reliable a reliable a reliable a reliable a reliable a reliable a reliable method for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the for analyzing the impedance impedance impedance impedance impedance spectra of light spectra of lightspectra of lightspectra of light spectra of lightspectra of lightspectra of light spectra of light spectra of light -emittinemittin emittin emittin g devices is establishedg devices is establishedg devices is established g devices is established g devices is established g devices is established g devices is establishedg devices is established g devices is established , and , and , and it can can can be be applappl ied to new materials and structure devices. new materials and structure devices. new materials and structure devices. new materials and structure devices. new materials and structure devices. new materials and structure devices. new materials and structure devices.new materials and structure devices. new materials and structure devices.new materials and structure devices. new materials and structure devices. new materials and structure devices.

並列關鍵字

semiconductor laser ； light-emitting diode ； differential carrier lifetime ； impedance ； recombination coefficient

參考文獻

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[2] A. A. Dikshit, Vishnu Vangapally, and J. M. Pikal, “Carrier lifetime in 1.3 μm InAs quantum-dot lasers using small-signal modulation technique,” Proc. of SPIE, vol. 6017, 60170L-1, 2005.

[3] R. Paoletti, M. Meliga, and I. Montrosset, “Optical modulation technique for carrier lifetime measurement in semiconductor lasers,” IEEE Photon. Technol. Lett., vol. 8, pp. 1447-1449, 1996.

[4] G. E. Giudice, D. V. Kuksenkov, and H. Temkin, “Measurement of differential carrier lifetime in vertical-cavity surface-emitting lasers,” IEEE Photon. Technol. Lett., vol. 10, pp. 920-922, 1998.

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以阻抗特性量測來分析半導體發光元件之微分載子生命期

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