利用UV/VIS/NIR吸收光譜建立CIGS太陽能薄膜電池之硫化鎘薄膜製程即時自動監測控制系統之研究

Using UV/VIS/NIR absorption spectra establish CdS thin film process real-time automatic monitoring and control system of CIGS thin-film solar cell

黃高御(Gao-yu Huang)

指導教授 ： 廖述良

國立中央大學/工學院/環境工程研究所/碩士(2014年)

摘要

CIGS太陽能薄膜電池之光電轉換效率與其硫化鎘(CdS)薄膜之厚薄有關，其薄膜之生成會受到反應物濃度與反應溶液之溫度及pH值之影響，然而其製程為密閉空間無法即時量測製程中各反應物質濃度之變化，是故，本研究利用UV/VIS/NIR吸收光譜原理，透過每五分鐘且連續掃描三小時之光譜資訊，分析各物質之濃度。由於硫脲、氨水及醋酸鎘之吸收波峰彼此會互相重疊造成其波長吸光度之增加，無法直接利用各物質之吸光係數分析得知其濃度，因此，本研究利用規劃求解之方法，透過物質重疊波段之主吸收波長及其主吸收波長前、後三個波長與吸光度，建立規劃求解各物質濃度之推估模式，但在硫化鎘生成反應過程中，氨水因其易揮發之特性，其濃度之變化除了反應生成硫化鎘所消耗之外，也包括氨水揮發所造成，因此須將氨水揮發造成之影響去除，且硫化鎘生成會造成各物質吸收波長之吸光度增加，因此，須將硫化鎘納入規劃求解之變數。然而推估模式所推估之硫化鎘生成量與實際之硫化鎘總生成量雖仍有一定之誤差，但相對於實廠製程使用較巨量之溶液，其推估模式於實廠之應用仍有一定之可行性，於實廠製程中，可將吸附於燒杯杯壁上之硫化鎘量視為實廠製程中吸附於基板上之硫化鎘量，得知吸附於基板上之硫化鎘量，其基板大小又為已知之固定尺寸，即可以得知吸附於基板上之硫化鎘薄膜之厚度，以提高製程產品之良率與效益，而過濾所得之硫化鎘量即為實廠硫化鎘薄膜製程結束後反應槽中殘餘之硫化鎘量，得知其殘餘量之資訊即可判斷製程能否繼續或是藉由添加反應物至反應槽中使硫化鎘生成反應持續進行，以提高製程之使用效率，減少原物料之損耗。

關鍵字

硫脲 ； 氨水 ； 醋酸鎘 ； 硫化鎘 ； 吸收光譜

並列摘要

Thickness of the cadmium sulfide (CdS) thin films is relation with the photoelectric conversion efficiency of CIGS thin-film solar cell. The reactant’s concentration, reaction solution’s temperature and the pH value is influence CdS thin films grown, resulting in process stability is not high and product yield is major changes. In this study, according to UV/VIS/NIR absorption spectra of theory , analyze the concentration of each substance use by every five minutes and three hours of continuous scanning spectral information, due to the absorption peak of thiourea , ammonia and cadmium acetate will overlap each other, resulting in the absorption will be increase in absorbance wavelength , concentration of various substances ,who can’t directly to analysis by the coefficient. Therefore, in this study to establish program solver concentration of each substance estimation model through the absorption wavelength, include to the main absorption wavelength, three wavelengths who is in front of the main absorption wavelength and three wavelengths who is after the main absorption wavelength at the substance overlapping bands by using program solver method. But in the process of CdS formation reaction , ammonia have the characteristics of volatile, in the course of the reaction, the concentration of ammonia is changes by the characteristics of volatile and the consumed of reaction, therefore, estimate the ammonia concentration by using program solver have to deducted consumption of volatilization, and cadmium sulfide generation will cause the absorption be increase in each material’s absorbance wavelength, therefore, bring in CdS to program solver variables. However, the total generate cadmium sulfide of the model’s estimation still have the error with the actual amount of cadmium sulfide, but compared to the real plant processes use to the massive of the solution, the estimation model use to the real plant certain feasibility, in the manufacturing process of the real plant, the cadmium sulfide who on the glass wall of the beaker is regard to the amount of cadmium sulfide as real process plant on a substrate, then the fixed board size that can be learned on the thickness of CdS films adsorbed on the substrate and improve efficiency of the process products. Filtering the resulting amount of cadmium sulfide is regard to residual amount after the end of the reaction, it can determine whether to continue the process or be added to the reaction so that the reactants CdS formation reaction continues to improve the efficiency of the use of process reduce the loss of raw materials.

並列關鍵字

thiourea ； ammonia ； cadmium acetate ； CdS ； absorption spectrum

參考文獻

張振昌(2006)，「化學水浴沉積法成長硫化鎘薄膜之研究」，國立中山大

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