灰化製程對鉻及氧化銦錫接觸阻抗之影響

本論文是在研究薄膜電晶體液晶顯示器中乾蝕刻製程產生之合成物，會造成鉻與氧化銦錫接觸阻抗異常。依六標準差管理手法為基礎，透過系統化的改善流程將鉻與氧化銦錫接觸阻抗異常的根因找出，於乾蝕刻製程後加入灰化製程以去除合成物達到降低鉻與氧化銦錫接觸阻抗的目標。主要以乾蝕刻設備，利用氧氣氣體電漿經由調整氧氣氣體流量、真空系統之壓力、真空系統射頻產生器之功率、製程時間等 4 個因子與鉻與氧化銦錫接觸阻抗之影響，經由田口實驗找出氧氣氣體流量、真空系統之壓力、真空系統射頻產生器之功率、製程時間等 4 個因子之最佳化，有效降低鉻與氧化銦錫接觸阻抗 15 %。

關鍵字

接觸阻抗；灰化製程；乾蝕刻

並列摘要

This paper is to study Thin Film Transistor - Liquid Crystal Display, dry etching process to produce the compounds, chromium and indium tin oxide contact resistance can cause abnormal. Depending on the Six Sigma management practices based on chromium and indium tin oxide contact impedance exception of the root due to find out through systematic improvement process, dry etching process by adding ashing process to remove the target compounds to reduce chromium and indium tin oxide contact resistance. Dry etching equipment, the use of oxygen gas plasma pressure through the adjustment of oxygen gas flow, vacuum system, vacuum system, RF generator which can generate power , the process time 4 factor and chromium and indium-tin oxide contact with the impedance effect of oxygen gas flow, vacuum system pressure , Taguchi experiment to find out the vacuum system, RF generator optimization of the four factors of the power , the process time . Effectively reduce the contact resistance of chromium and indium-tin oxide 15%

並列關鍵字

ashing process ； the contact resistance ； Dry etching

參考文獻

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灰化製程對鉻及氧化銦錫接觸阻抗之影響

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