本研究所使用之rr-P3HT是利用格林置換反應,合成出高立體規則度聚(三-己基噻吩) (rr-Poly(3-hexylthiophene);rr-P3HT)高分子,並且經由陰離子聚合方法來進行末端官能化步驟,合成出末端具有矽氧烷之高分子P3HT-(Si(OCH3)3)2。由核磁共振儀 (Nuclear Magnetic Resonance Spectroscopy, NMR) 驗證結構;能量散射光譜儀 (Energy Dispersive Spectrometer, EDS) 及X射線光電子能儀 (X-ray photoelectron spectroscopy, XPS)探討材料元素;TGA探討熱性質;UV/Vis. 分析,在薄膜態有明顯紅位移且鍵結上Si元素有藍移現象; AFM、XRD 探究結晶性及排列性。 最後,將P3HT-(Si(OCH3)3)2做成有機薄膜電晶體之半導體層,飽和電流從鍵結前11 nA至鍵結後47 nA,mobility從3.75x10-5 cm2/V.s提升至3.44x10-4 cm2/V.s,起始電壓從11V下降至-6V。
The study is to synthesis high regioregular Poly(3-hexylthiophene)(rr-P3HT) by Modified Grignard Metathesis(GRIM), and then functionalize this polymer with a thiol terminal group by anionic polymerization(P3HT-(Si(OCH3)3)2). The structure of polymer has been confirmed by NMR. The element of polymer has been confirmed by EDS and XPS. The thermal properties have been investigated by TGA. The UV-Vis spectrum shows that the thin film samples have red shift compared to the solution samples, and the silicon caused a blue shift of the wavelength. The crystallinity and orientation have been investigated by AFM and XRD. Finally, P3HT of different molecular weights and corresponding P3HT-(Si(OCH3)3)2 were used as the semi-conducting layer for fabricating Organic Thin Film Transistors(OTFTs). The saturation current increases from 11 nA to 47 nA, the mobility increases from 3.75x10-5 cm2/V.s to the maximal 3.44x10-4 cm2/V.s and the threshold voltage decreases from 11 V to -6V.