Y2Ti2O7 薄膜製備與其介電特性之研究

本文旨在使用溶膠凝膠法搭配旋轉塗佈技術，沉積Y2Ti2O7薄膜於矽基板上，將此薄膜做退火處理，並製作成金屬-絕緣體-金屬結構 (MIM) 元件，探討退火溫度及退火持溫時間對薄膜電性及物性影響。由實驗結果得知，在700℃以下薄膜為非結晶相，其介電常數約為13至16間，漏電流密度在0.4 MV/cm時，最低可到7.64×10-10 A/cm2，介電損失最低0.008；而800℃以上薄膜為結晶相其介電常數隨退火溫度及退火持溫時間而減低，最高為22最低為10，推測薄膜與矽基板間形成中間層，以致此現象的產生，由於此中間層的產生導致漏電流密度與介電損失降低。故得知Y2Ti2O7薄膜在非結晶相下，具有高的介電常數，不錯的漏電流密度，在退火處理下可提升其穩定性。

關鍵字

溶膠凝膠法；高介電常數

並列摘要

Y2Ti2O7 thin films were prepared by sol-gel method and deposited on Si substrate by spin coating. Used annealing process then fabricated metal-insulator-metal structure, i.e. MIM, in order to realize annealing temperature and annealing time affect films dielectric properties and morphology. According to experiment results, we investigated that below 700℃ these films were amorphous, dielectric constants between 13 and 16, the lowest leakage current density was 7.64×10-10 A/cm2 at 0.4 MV/cm, and dielectric loss was 0.008; Above 800℃, films were crystallized and the dielectric were decreased when the annealing temperatures and times were increased, the highest was 22, the lowest was 10. We suspected that this phenomenon was occurred when the interfacial layer was formed. Due to this interfacial layer, leakage current density and dielectric loss were decreased. We found amorphous Y2Ti2O7 thin films had high dielectric constant, good leakage current density, and through annealing process could increase films’ stability.

並列關鍵字

High-k dielectric constant ； Sol-gel method

參考文獻

[1] James D. Plummer, Michael Deal, Peter D. Griffin, Silicon VLSI Technology: Fundamentals, Practice, and Modeling, 2nd edition (Prentice Hall, 2000).

[5] Byoung Hun Lee, Laegu Kang, Renee Nieh, Wen-Jie Qi,

[10] G. Teowee, K.C. McCarthy, F.S. McCarthy, T.J. Bukowski, D.G. Davis Jr., D.R. Uhlmann, J. Sol-Gel Sci. Tech. 13, 895 (1998).

[20] Jiwei Lu, Steffen Schmidt, Young-Woo Ok, Sean P. Keane, Susanne Stemmer, J. Appl. Phys. 98, 054101 (2005).

[25] M.-H. Cho, D.-H. Ko, K. Jeong, S. W. Whangbo, C. N. Whang, S. C. Choi, S. J. Cho, J. Appl. Phys. 85, 2909 (1999).

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Y2Ti2O7 薄膜製備與其介電特性之研究

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