氮摻雜石墨烯之合成與鑑定

Synthesis and Characterizations of Nitrogen Incorporated Graphene

曾建智(Chine-Chih Tseng)

指導教授 ： 謝雅萍

國立中正大學/工學院/機電光工程研究所/碩士(2012年)

摘要

無資料

關鍵字

石墨烯

並列摘要

The electrical properties of graphene can be effectively tailored by nitrogen doping, making it potent for various applications. There are three bonding configurations for the N-atom in doped graphene, referring to “Pyridinic-N”, “Pyrrolic-N” and “graphitic-N”. Two main approaches have been widely used to synthesize N-doped graphene including direct synthesis of n-doped graphene on copper foils by chemical vapor deposition, and using graphene oxide (GO) as raw material followed by thermal annealing in an NH3 atmosphere. However, n-type graphene with extended air stability was not obtained in previous studies.
In the first part of the thesis, we using a facile way to produce n-type graphene with extended air stability by low temperature thermal decoration method. This approach is effective to tailor electronic property of Graphene by π–π stacking with s-triazine molecules. We observed that the structure of s-triazine molecules was maintained measured by x-ray photoelectron spectroscopy (XPS).
Secondly, we have successfully used the electrochemical exfoliation graphene as a raw material followed by thermal annealing it with s-triazine to produce n-type graphene films. This method indicates the possibility to control the nitrogen bonding structures in graphene lattice, which may allows for various applications.

並列關鍵字

Graphene

參考文獻

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