本研究使用溶劑熱法去合成CIGS薄膜。我們討論四種變因,分別為不同銦鎵比之CIGS合成、在熱退火階段通入不同氫含量、改變不同熱退火溫度及改變不同退火時間長度。實驗結果我們發現使用此方法合成CIGS薄膜之最佳參數比例為Cu:In:Ga:Se = 1:0.7:0.3:2、在熱退火階段5%為最佳氫含量、最佳熱退火溫度為600℃,而熱退火時間長度為100分鐘。此外,我們發現晶粒大小與片電阻成反比,這是因為結晶越小,表示晶界和缺陷越多,如此一來,電子在傳遞過程中所遇到的阻礙就越多,因此導電率也較差。使用最佳參數合成之CIGS薄膜得到最大之晶粒大小約為100nm,此為本方法之最大突破。
In this study, a low-cost and non-vacuum process by solvothermal method was demonstrated for fabrication of Cu (In, Ga) Se2 (CIGS) thin films. Firstly, the CIGS precursor nanoparticles were synthesized by solvothermal method. Subsequently, the CIGS films were synthesized via spin-coating and then annealing process. The obtained samples were systematically characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Four-point probe. We found that as annealing temperature increases, the intensity of X-ray diffraction peak increases and the location will be slightly shift; the lattice constant will result in be different. Experimental results show that optimal parameter of CIGS thin film by solvothermal route Cu:In:Ga:Se = 1:0.7:0.3:2, hydrogen content is 5%, annealing temperature is 600 degree, and annealing time is 100 minutes.
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