選擇性成長氧化鋅奈米柱於矽奈米柱陣列之機制與特性探討

Mechanism and Properties of Selective-grown ZnO Nanorods on Periodic Si Nanorod Arrays

王英哲(Ying-Jhe Wang)

指導教授 ： 呂明諺

國立中正大學/工學院/光機電整合工程研究所/碩士(2014年)

摘要

本研究先在矽基板自組裝單層聚苯乙烯奈米球，接著以氧電漿蝕刻縮小聚苯乙烯球，再利用奈米球微影製程及金屬輔助化學蝕刻技術製作矽奈米柱陣列。矽奈米柱的直徑和柱與柱間的距離可由氧電漿蝕刻的條件與聚苯乙烯球的大小控制，而矽奈米柱長度可利用化學蝕刻時間控制在幾微米至10幾微米之間。由於矽奈米柱陣列具有疏水特性，本研究即利用此特性讓硝酸鋅水溶液於矽奈米柱頂端選擇性沉積晶種，而後利用水熱法成長氧化鋅奈米柱於矽奈米柱陣列上，氧化鋅奈米柱能均勻分佈在矽奈米柱頂端，完成n型氧化鋅奈米柱與p型矽奈米柱陣列異質結構的成長。由吸收光譜可知，此異質結構有較佳的光吸收能力。另外，此異質結構所形成的p-n接面電子元件在元件的操作上除了有較低的漏電外，對於紫外光的偵測能力也比氧化鋅奈米柱與矽基板組成的元件來的好。本研究具有低成本、減少材料使用與大面積生產的優勢，有利應用於光電元件。

關鍵字

矽奈米柱陣列 ； 選擇性成長

並列摘要

Periodic Si nanorod (NR) arrays were fabricated by nanosphere lithography as described in the previous work.1 Self-assembled monolayer of PS sphere was first prepared on Si substrate. Subsequently, plasma etcher was used to reduce the diameter of the PS sphere. Si NRs arrays were etched obtained by metal-assisted chemical etching method, using mixed HF and H2O2 solution. The lengths of Si NRs can be controlled from few to tens micrometer by different etching times. The periodic Si NR arrays exhibit the hydrophobic property, which are used to selectively deposit the ZnO seeds on the top of the Si NRs by dropping the Zn(NO3)2 solution on Si NR arrays. Then, n-ZnO NRs/p-Si NR arrays heterostructure was achieved by the hydrothermal growth of ZnO NRs on the top of seeded Si NRs, the results showed the ZnO NRs grown uniformly on the Si NRs. The proposed nano-heterostructures have advantages in low equipment requirements, low material waste and mass production. Compared to n-ZnO NRs/p-Si substrate heterostructures, the electrical characteristics and photorespones exhibit lower current leakage and higher sensitivity to UV light, respectively.

並列關鍵字

Si nanorod arrays ； selective-grown

參考文獻

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