本實驗在高真空環境下使用蒸鍍槍去成長鈷、鎳、鈷鎳合金的薄膜在矽基板上,接著對薄膜進行曝氧動作,使其表層鎳、鈷、鎳鈷合金形成一層氧化層,並且利用X光吸收光譜 (X-ray Absorption Spectroscopy , XAS) 可以確定表面氧化層的存在,得到所需的樣品NiO/Ni/Si、CoO/Co/Si、NiCo-O/NiCo/Si。樣品使用磁光柯爾效應 (Magneto-Optical Kerr Effect, MOKE) 與震動樣品磁性分析儀 (Vibrating sample magnetometer, VSM) 研究磁性。後續在鈷、鎳及其氧化層的上下方加上了金屬層 (Ta),以便做四點的電性量測。磁性量測下結果,Ta/CoO+Co(d)/Ta/Si:d=7、40 (nm) 的樣品以及在鎳鈷合金[NiCoO+NiCo]n/Si :n=3的樣品磁易軸皆是屬於與樣品表面平行的。使用四點量測時,則有磁電阻值的訊號產生,以及Ta/NiO+Ni(d)/Ta/Si隨著d(nm)厚度增加後,阻值 (Ohm) 反而會有遞減的現象。
This experiment used the evaporator gun to grow cobalt, nickel, cobalt and nickel alloy thin film on the silicon substrate in high vacuum environment, then thin film contacted oxygen, it made the surface of nickel, cobalt, nickel-cobalt alloy oxide layer, and the use of X-ray Absorption Spectroscopy (XAS) to determine the presence of a surface oxide layer. Obtaining a sample of NiO/Ni/Si, CoO/Co/Si, NiCo-O/NiCo/Si. We used Magneto-Optical Kerr Effect (MOKE) and Vibrating sample magnetometer (VSM) to analyze the sample. The order of growing on silicon substrate is metal layer, magnetic layer, oxide layer and metal layer. We used tantalum as a metal layer. Then we did four point measurment. The results of Magnetic measurement, Ta/CoO+Co(d)/Ta/Si: d=7, 40 (nm) and [NiCoO+NiCo]3/Si magnetic easy axis are all belonging parallel to the surface of the sample. By the four point measurement, sample had magnetoresistane signal. The Sample Ta/NiO+Ni¬(d)¬/Ta/Si, d thickness to increases, the resistance produced phenomenon of diminishing.
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