In2O3:Cu, M (M=Mg, Ca, Sr)薄膜之微結構及性質研究

The Study on the Microstructure and Properties of In2O3:Cu, M (M=Mg, Ca, Sr) Thin Films

鄭嘉豪(Jia-Hao Jheng)

指導教授 ： 陳國駒

義守大學/理工學院/材料科學與工程學系/碩士(2014年)

https://doi.org/10.6343/ISU.2014.00298

摘要

本實驗首先經由研磨、煆燒、壓胚以及燒結等製程製備出濺鍍所用的In2O3:Cu靶材，再利用RF磁控濺鍍法在藍寶石基板(0001)上沉積In2O3:Cu薄膜。藉由改變不同的退火溫度及Mg、Ca、Sr摻雜量，探討以上變數對薄膜結晶性、微結構、光學性質以及磁性質的影響。
　　實驗結果顯示，經由退火溫度為950℃30分鐘後，具有較佳的電性及光性，其電阻率達到2.598×10-2 Ω•cm，而在可見光穿透率可高達92%，能隙為3.73eV。
　　當Mg的摻雜量為7at%時有較好的光性及電性，薄膜在可見光範圍內穿透率可達到96%，能隙最大為3.69eV，而電阻率最低可達5.3869×10-1 Ω•cm。
　　當Ca在摻雜量為5at%時有相對較好的光性及電性，雖然5at%在可見光範圍內的穿透率僅有87%，比3at%略差一些，而能隙為3.66eV，但電阻率為8.1312 Ω•cm，卻比3at%低約3~4個數量級。
　　當Sr在摻雜量為3at%時有相對較好的光性，在可見光範圍內可達96%，而能隙為3.68eV，而7at%則是有較好的電性，電阻率最低達6.5036×10-2 Ω•cm。

關鍵字

退火 ； 摻雜 ； RF 磁控濺鍍

並列摘要

In this study, the In2O3: Cu target was prepared by using grinding, calcination, embryo-pressurization, and sintering processes. Then the RF magnetron sputtering is employed to deposit the In2O3: Cu thin film on the (0001) sapphire substrates. By changing the annealing temperature and the concentrations of magnesium, calcium or strontium element, the crystallinity, microstructure, and optical as well as magnetic properties are thoroughly investigated.
　　From the experiment results, the In2O3:Cu thin film has the best optical properties and electrical properties after 30 minutes of annealing at temperature of 950℃. The resistivity reaches 2.598×10-2 (Ω•cm), and the transmittance coefficient is up to 92% in visible light. Its energy gap is about 3.73 (eV).
　　When the concentration of magnesium is 7at%, it has better optical and electrical properties. The transmittance coefficient is up to 96% in visible light, and the energy gap is about 3.69 (eV). The minimum resistivity is 5.3869×10-1 (Ω•cm).
　　When the concentration of calcium is 5at%, it has relatively better optical and electrical properties. Although the transmittance coefficient is only 87% in the visible light that is slightly worse than that of the 3at% sample, however, the resistivity is 8.1312 (Ω•cm), lower than the 3at% sample by about 3 ~ 4 orders of magnitude. The energy gap is about 3.66 (eV).
　　When the concentration of strontium is 3at%, it has relatively better optical properties. The transmittance coefficient is up to 96% in visible light, and the energy gap is about 3.68 (eV). However, the sample with concentration of 7at% has better electrical properties and the resistivity lowers down to 6.5036×10-2 (Ω•cm).

並列關鍵字

In2O3 ； annealing ； doping ； RF magnetron sputtering

參考文獻

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