以吩為主的有機半導體材料之合成及其應用於有機場效電晶體特性之研究

Studies on the Synthesis and Application of Thiophene-Based Semiconductor Materials on the Characteristics of Organic Field-Effect Transistor

張晴翔(Ching-Hsiang Chang)

指導教授 ： 郭欽湊

大同大學/工程學院/化學工程學系所/碩士(2008年)

摘要

利用 Kumada Coupling 成功合成 α-bithiophene (α-2T)、α-terthiophene (α-3T)、α-quinquethiophene (α-5T) ，藉由 1H-MNR 與 FT-IR 以及熔點測定鑑定結構無誤。用熱蒸鍍方式沉積在TFT上，但是並沒有顯著元件特性表現。
利用Grignard metathesis 合成三種不同側鍵烷基位置規則(3-烷基吩)三嵌段型共聚物分別為 poly(3-hexylthiophene-co-3-thiophene-co-3-dodecylthiophene)(P3HT-co-PT-co-P3DDT), poly(3-octylthiophene- co-3-hexylthiophene-co-3-methylthiophene)(P3MT-co-P3HT-co-P3OT), poly(3-hexylthiophene-co-3-octylthio- phene-co-3-hexylthiophene)(P3HT-co-P3OT-co-P3HT)。以NMR, FTIR, GPC, XRD, UV 和 CV 對合成出的產物進行一系列物性探討比較。將聚(3-烷基吩)共聚物應用作為有機薄膜電晶體之半導體材質，其載子位移率、開關電流比分別為 1.65×10-4 cm2/Vs, 1.85×104 (P3HT-co-P3OT- co-P3HT), 3.19×10-4 cm2/Vs, 8.69×103 (P3HT-co-PT-co-P3DDT),以及 2.88×10-3 cm2/Vs, 2.73×104 (P3MT-co-P3HT-co-P3OT)。除此之外相對比較他們的物性與TFT元件特性，發現三成份的共聚物載子位移率都有較低的趨勢，但是驅動電壓均較聚(3-烷基吩)，二嵌段型(3-烷基吩)共聚物更低，而其開關電流比則有隨著分子量增加而提高的趨勢。

關鍵字

聚(3-烷基吩) ； 嵌段型共聚物 ； 寡聚吩 ； 位移率 ； 開關電流比

並列摘要

The series of oligothiophene, which contains α-bithiophene (α-2T), α-terthiophene (α-3T), and α-quinquethiophene (α-5T), have been synthesized successfully by Kumada Coupling method. The structure of above oligothiophenes has been confirmed by FT-IR, 1H-NMR, and melting point. Unfortunately, the charactaistics of thin-film transitor with oligothiophene by vacuum thermal evaporation cannot exhibit.
Three kinds of the 3-alkylthiophene copolymers: poly(3-hexylthiophene-co-3-thiophene-co-3-dodecylthiophene)(P3HT-co-PT-co-P3DDT), poly(3-octylthiophene- co-3-hexylthiophene-co-3-methylthiophene)(P3OT-co-P3HT-co-P3MT), and poly(3-hexylthiophene-co-3-octyl- thiophene-co-3-hexylthiophene)(P3HT-co-P3OT-co-P3HT) have been synthesized successfully by Grignard metathesis. The physical properties of synthesized products were done by NMR, FT-IR, GPC, XRD, UV, and CV. The structure and regioregularity of triblock copolymers were identified by NMR analysis. The characteristics of organic thin-film transistor fabricated with triblock copolymers acted as semiconducting material have been carried out. The charge transport mobility and on/off current ratio of triblock copolymers OTFT are 1.65×10-4 cm2/Vs and 1.85×104 of P3HT-co-P3OT-co-P3HT, 3.19×10-4 cm2/Vs and 8.69×103 of P3HT-co-PT-co-P3DDT, and 2.88×10-3 cm2/Vs and 2.73×104 of P3MT-co-P3HT-co-P3OT, respectively. Besides, compared with the physical properties and characteristics of poly(3-alkylthiophene) and diblock copolymer TFTs have been investigated. It is found that the charge transport mobility of triblock copolymer TFTs is lower than that of poly(3- alkylthiophene) and diblock copolymer TFTs, but the threshold voltage of triblock copolymer TFTs is better than that of poly(3-alkylthiophene) and diblock copolymer TFTs. The on/off ratio increases with increasing molecular weight.

並列關鍵字

organic thin-film transistor ； oligothiophenes ； triblock copolymer ； poly(3-alkylthiophene) ； mobility ； on/off current ratio

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