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  • 學位論文

利用原子力顯微鏡之區域陽極氧化技術製作氧化鋅薄膜電晶體

Fabrication of Zinc Oxide Thin Film Transistors by Atomic Force Microscopy Local Anodic Oxidation

指導教授 : 蔡宗惠
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摘要


本研究利用原子力顯微鏡之區域陽極氧化技術,製作一氧化鋅薄膜電晶體。首先於已成長氧化矽之矽基板中沉積鋅薄膜,並於大氣環境下操控原子力顯微鏡,當探針與鋅為一偏壓迴路時,於探針端施加一直流負偏壓,使得探針與鋅之間形成一強大電場,以解離大氣環境中之水氣,而部分氧離子則會受到電場作用之關係與鋅薄膜反應,則反應出氧化鋅之材料,並將其運用於電晶體結構中主動層材料使用。 針對區域陽極氧化技術於鋅金屬薄膜上施加不同探針偏壓、掃瞄速度、探針距離及掃描次數,以了解氧化鋅之表面形貌及各項資訊,而做為後續製作元件時,所需之重要參數依據。首先以黃光微影之方式於基板中定義元件金屬電極所需之尺寸圖型,並鍍上鋅金屬薄膜後,以原子力顯微鏡於圖型之通道中成長一寬度30 μm及長度300 nm之氧化鋅薄膜結構,因而便完成此背閘極式氧化鋅薄膜電晶體元件。 本研究成功利用原子力顯微鏡之區域陽極氧化技術,製作一為p - type特性之空閥型氧化鋅薄膜電晶體,且綜合其各項特性如:場效遷移率22.89 cm2/(V-s)、工作頻率40 MHz、電流開關比104、起始電壓 0.4 V、轉移電導率15.8 μS,即具備電晶體之各項特性;且本實驗以此技術為基礎,成功發展新穎的氧化鋅薄膜及電子元件之製程技術。

並列摘要


Zinc oxide (ZnO) thin film transistors (TFTs) were fabricated by atomic force microcopy (AFM) local anodic oxidation (LAO) technology. We deposited the zinc (Zn) thin film on a substrate and operated the AFM at room temperature to fabricate this TFT. When applying a negative voltage on the AFM tip, the potential difference across tip to the Zn thin film surface was created. The voltage can generate a electric field between the tip to the sample surface, and to ionized the water molecules. A port of oxide ions was transported into the Zn thin film. Hence, it produced the ZnO locally. This material acted as the active layer of transistors. In this thesis, we study the LAO technology by difference tip voltages, scan rates, distance from tip to sample, times of scan. To understand the structure of oxide, and choose better parameters to fabricate ZnO TFTs. We used conventional photolithography to make a pattern on the substrate, deposited the zinc thin film and followed lift off process to generated electrode. Use LAO technology to produced the active layer structure in channel length of 300 nm(oxidation regime) and channel width of 30 μm(width of zinc stripe) of ZnO to complete the structure of a back gated ZnO TFT. We fabricated a p-type depletion mode ZnO TFT by AFM LAO technology in this work. Characteristics of the device shows its mobility of 22.89 cm2/(V-s), work frequency of 40 MHz, Ion/Ioff ratio of 104, threshold voltage of 0.4 V, transconductance of 15.8 μS. We believe that the successful development of this new technology to fabricated ZnO TFT can open an route to fabricate practical electron device base on AFM LAO technology.

參考文獻


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被引用紀錄


高聖豪(2012)。利用原子力顯微鏡之區域陽極氧化技術製作全金屬氧化鈦薄膜電晶體〔碩士論文,大同大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0081-3001201315112929
張至安(2012)。微波氫/氮電漿退火的製程壓力與功率對氧化鋅共摻雜鎵鋁薄膜的光/電/微結構特性的影響〔碩士論文,崑山科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0025-1907201210373900

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