藉由射頻磁控濺鍍沉積透明導電薄膜之特性研究

Characteristics of the Transparent Conductive Thin Film by RF Magnetron Sputtering

李偉銘(Wei-Ming Li)

指導教授 ： 施文欽

大同大學/電機資訊學院/光電工程研究所/碩士(2010年)

摘要

透明導電膜擁有良好的光電特性，能夠應用在光電領域上。本研究使用射頻磁控濺鍍法在玻璃基板上沉積ITO與AZO薄膜，並且改變射頻功率、製程壓力、薄膜厚度與基板溫度等參數，去探討對透明導電膜ITO與AZO的結構與光電特性之影響。
較高的射頻功率、低的製程壓力、適度的厚度與較高的基板溫度可以提升透明導電膜AZO與ITO的結晶與電阻率的下降。ITO在功率40 W、壓力3 mtorr、厚度 200 nm與基板溫度300℃可以得到電阻率為1.2×10-4 Ω-cm，其片電阻為6 Ω/ square，可見光穿透率為87.0 %，平均粗糙度為0.99nm，能隙為3.558 eV的結果。AZO於功率95 W、壓力3 mtorr、厚度1000 nm與基板溫度300℃可以得到電阻率為1.3×10-3 Ω-cm，其片電阻為13 Ω/ square，可見光穿透率為87.6 %，平均粗糙度為2.93 nm，能隙為3.440eV的結果。

關鍵字

氧化鋅鋁 ； 濺鍍 ； 透明導電膜 ； 氧化銦錫

並列摘要

Transparent conducting oxide films possess excellent electrical and optical properties. They can be widely applied to the optoelectronic industry. In this study, the ITO (indium tin oxide) and the AZO (aluminum zinc oxide) were deposited on glass substrates by RF magnetron sputtering. The structures and optoelectronic properties of the ITO and AZO thin films deposited under various RF power, deposition pressure, film thickness and substrate temperatures were investigated.
For TCO, the crystalline structure was improved with increasing RF power, film thickness and substrate temperatures and decreasing pressure decreased, and consequently the electrical resistivity was decreased. The optimal parameters for the ITO films are power of 40 W, deposition pressure of 3 mtorr, film thickness of 200 nm, substrate temperatures of 300℃.We can get the resistivity of 1.2×10-4 Ω-cm, sheet resistance of 6 Ω/ square, transmittance in the visible range of 87.0 %, surface roughness=0.99 nm and the optical band gap of 3.558 eV. The optimal parameters for the AZO films are RF power of 95 W, deposition pressure of 3 mtorr, film thickness of 1000 nm, substrate temperatures of 300℃.We can get the resistivity of 1.3×10-3Ω-cm, sheet resistance of 13 Ω/ square, transmittance in the visible range of 87.6% surface roughness=2.93 nm and the optical band gap of 3.440 eV.

並列關鍵字

AZO ； Sputtering ； TCO ； ITO

參考文獻

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