本研究利用墊子層-孵育層-微晶矽(pad silicon-incubation silicon-microcrystalline silicon)三層堆疊式的主動層結構解決了製作反堆疊式微晶矽薄膜電晶體時,主動層沉積過程中氫氣對於絕緣層破壞的問題。並利用了incubation silicon的氫氣含量差異實驗,在薄膜電晶體的電性表現上再次證實了過多氫氣的蝕刻與離子轟擊確實對反堆疊式微晶矽薄膜電晶體的製作造成負面的影響,也在SEM的觀察中發現薄膜內部結構因為過多的氫氣蝕刻與離子轟擊的作用下,形成許多的孔洞與許多次晶粒的產生,這也是造成薄膜電晶體操作不良的主因。而以此方式製作的微晶矽薄膜在結晶率的表現上已經可以達到約70%,已合乎工業界上60%的要求,並在適當的氫氣條件下製作的通道長寬比300比50的反堆疊式微晶矽薄膜電晶體所得的電子遷移率已可達0.98 cm2/V.s,開關電流比值也可達到2.62×107。
In this study, we deposited pad-silicon, incubation-silicon, and microcrystalline-silicon in proper order in situ using PECVD. Then we used three-layers microcrystalline silicon (μc-Si) film as active-layer of bottom-gate TFTs at a very low temperature (~200℃). This method can solve the problem of hydrogen ion bombardment when depositing active-layer on top of insulator. According to results, excessive flow rate of hydrogen when depositing thin films will form a lot of defects such as fine grains and voids in the films. The highest crystallization fraction of 69 % can be achieved, which was higher than industry standard 60%. The field effect mobility, ON/OFF ratio of proposed μc-Si thin-film transistor (TFT) were 0.98 cm2/V.s, 2.62107, respectively.
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