薄膜電晶體於13.56MHz軟性射頻電子標籤橋式整流器之設計

TFT Bridge Rectifier Design for 13.56MHZ Flexible RFID Transponder Front End

吳宜振(wu i chên)

指導教授 ： 陳永進

亞洲大學/資訊學院/電腦與通訊學系碩士班/碩士(2007年)

摘要

近年來由於短距離無線通訊的技術發展快速，人們對於短距離無線通訊產品的需求愈來愈多，其中包括無線射頻辨識(Radio Frequency Identification；RFID)系統。本論文主要內容為利用MOS level 3 model 以及TFT (Thin Film Transistor)的重要參數如電子遷移率(UO)、截止電壓(VTO)、溫度(TOX)模擬TFT元件，針對13.56MHz被動式Transponder 之AC to DC整流電路之功率轉換效率(Power Conversion Efficiency; PCE)進行研究，並分析在電路結構及製程參數下的PCE變化，驗證TFT元件製程技術能否替代傳統式MOS元件製程技術之設計可行性，並探討是否可應用於軟性電子(Flexible Electronics)技術大量生產軟性射頻電子標籤。

關鍵字

無線射頻辨識、薄膜電晶體、功率轉換效率、軟性電子

並列摘要

This paper discuss the bridge rectifier circuit design of the RFID transponder front-end based on thin film transistor technology, which is a promising device for flexible electronics. This is mainly because flexible electronics can be made using a continuous roll-to-roll process and cut the cost as a result.
We simulate and analyze the performances of TFT-based gate bridge rectifier by means of Smart Spice and compare with that using diode and MOSFET devices.
Proper parameters for high values of PCE was found and circuit layout has also been done.

並列關鍵字

RFID、TFT、Flexible electronics、PCE

參考文獻

[1]Yunlei Li, Jin Liu, “A 13.56MHz RFID Transponder Front-End with Merged Load Modulation and Voltage Doubler-Clamping Rectifier Circuits,” IEEE International Symposium on Circuits and Systems, Vol. 5, pp. 5095-5098, 2005.

[5]Hu Jianyun, He Yan, Min Hao, “High efficient rectifier circuiteliminating threshold voltage drop for RFID transponders, on ASIC.

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