錫-銦氧化導電膜光電特性的研究

The Photoelectric Properties Research of ITO Conducting Film

吳基榮(K. R. Wu) ； 楊逸辰(Y. C. Yang) ； 葉秀聰(S. T. Yeh) ； 蘇睿傑(J. C. Su) ； 劉伍健(W. C. Liu)

《高雄海院學報》 18期 (2003/12) Pp. 49-61

摘要

使用封閉式非平衡磁控濺鍍方式，在玻璃及矽晶片的基才上，濺鍍錫-銦氧化物薄膜。利用實驗可以得到氧氣分量、氬氣壓力、被鍍物與靶材的距離、濺射功率對於錫-銦氧化物薄膜的透光率、電阻以及薄膜厚度的影響，並且討論試片經過退火處理以及多層膜的處理後，其電阻及透光率的改變程度。

關鍵字

ITO(銦-錫氧化物) ； 封閉式非平衡磁控濺射 ； 退火 ； 多層膜

並列摘要

In this preliminary study, a closed-field unbalanced magnetron system was used to sputter the ITO (indium-tin oxide) on glass and silicon wafer substrate, respectively. The effects of process parameters, such as oxygen flow rates, partial argon pressure and distance between target and substrate, on the photoelectric properties of ITO films were investigated. It was found that the oxygen flow rates had profound influence on the volume resistance of the films. Post annealing and multi-layered structure could significantly improve the conductivity of the films.

並列關鍵字

ITO film (indium-tin oxide) ； unbalance magnetron ； annealing ； mult-layer