以矽／氮化矽為材料在砷化鎵基板上鍍製抗反射及高反射鏡

Using Si/SiN(subscript x) to Deposit Antireflection and high-reflection Mirrors on GaAs Wafer

謝彩鳳(Tsai-Feng Hsieh) ； 施銘洲(M. J Shih) ； 黃承揚(Chen-Yang Huang)

《光學工程》 87期 (2004/09) Pp. 49-54

https://doi.org/10.30011/OE.200409.0006

摘要

本文將要介紹以矽及氮化矽分別為高低折射率材料在砷化鎵基板上鍍製抗反射及高反射鏡的製程方法，在波長1,520~1,580nm的範圍內，反射率可達2%(AR)及91%(HR）。文中對於膜層在砷化鎵基板上極為困難的附著條件也提出改善的方法及建議。

關鍵字

砷化鎵 ； 光學鍍膜 ； 氮化矽 ； 直流磁控濺鍍

並列摘要

In this article, we introduce the process of depositing Si and SiN(subscript x) as the interlaced high and low refractive index layers to fabricate the antireflection and high-reflection mirrors on GaAs wafer. The measured reflectance of AR and HR in the wavelength ranges from 1,520nm~4,580nm is 2% and 9%, respectively. The improvement of the poor adhesion on the surface of GaAs substrate is also described.

並列關鍵字

GaAs ； Optical Coating ； silicon nitride ； DC Magnetron Sputtering