- 期刊
以晶圓接合與基板移除技術研製外部共振腔式綠光發光二極體
Investigation of Green External resonant-cavity light-emitting Devices by Wafer Bonding and Substrate Removal Techniques
摘要
本研究利用雷射剝離及晶片貼合技術製作綠光氮化銦鎵垂直共振腔發光二極體，其元件結構中發光層上下皆為高反射率介電質布拉格反射鏡，介電質布拉格反射鏡之反射率為95與99%，由室溫下電激發光頻譜中，我們發現具有微共振腔結購之綠光發光二極體能有效的將發光頻譜半高寬由原本的48nm降低至42nm，並得到半寬高為5.5nm的發光頻譜模態。
並列摘要
A GaN-based resonant-cavity light-emitting diode (RCLED) has been fabricated on Si by laser lift-off and wafer bonding techniques. The RCLED structure is consisted of an InGaN/GaN multiple-quantum-well active layer between the top (4.5-pairs) and bottom (7.5-pairs) dielectric TiO2/SiO2 distributed Bragg reflectors (DBRs) with optical reflectance of 95 and 99.9%, respectively. The cavity mode of the RCLED shows a linewidth of 5.5nm at a main emission peak at 525nm. The emission full width at half maximum can decrease from 48 to 42nm, indicating the effect of the DBR micro-cavity.
延伸閱讀
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