物理氣相傳輸法碳化矽單晶生長數值模擬

本文以CZ法和Kristall-3M長晶爐等生長單晶的晶體設備，經過實驗後可自行成功生長出蘭克賽單晶晶體。因有使用CZ法實際的蘭克賽長晶經驗及技術，所以本研究加入電腦軟體模擬，將晶體生長過程中的長晶參考數值作詳細的研究。我們將Kristall-3M長晶爐調整過後再使用物理氣相傳輸法（簡稱：PVT法）長出碳化矽（SiC），並運用多重物理量有限元素工程分析軟體來進行模擬，模擬分析長晶程序之熱場，以獲得製程的最佳化參數，有助於實際生長SiC單晶分析探討及研究。我們模擬的腔體內溫度顯示在大約1400到3200℃左右、徑向溫度梯度的部份會在3~6℃/cm左右。如此低的徑向溫度梯度將可得到很好的生長晶體品質。

關鍵字

PVT法； COMSOL Multiphysics ；碳化矽；物理氣相傳輸法

並列摘要

In this paper, we use the CZ method and the Kristall-3M crystal growth furnace to take a successful experiment on the growth of single crystal Langasite. We have the actual experience of using the CZ method of crystal Langasite growth technology, therefore we add the computer software simulation to study the reference parameters of the crystal growth. We adjust the Kristall-3M crystal growth furnace equipment and use the physical vapor transport method (referred to as: PVT method) to grow silicon carbide (SiC). We use the multiple physical engineering finite element analysis software to simulate and analyze the heat field to get the most proper parameters of growth process, and help to take the research and analysis of the growth of SiC single crystal. We take simulations to get the temperature in the chamber is 1400~3200℃, the radian temperature gradient is 3~6℃/cm. The small radian temperature gradient could attain very good quality in crystal growth.

並列關鍵字

PVT method ； COMSOL Multiphysics ； silicon carbide

國際替代計量

物理氣相傳輸法碳化矽單晶生長數值模擬

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