Lattice Vacancies and Interstitials in Silicon

G. D. Watkins

《Chinese Journal of Physics》 15卷2期 (1977/07) Pp. 92-101

並列摘要

A review is given of what is known about the simple intrinsic lattice point defects in silicon. This information has come primarily from high energy electron irradiation studies at cryogenic temperatures (4.2 K, 20.4 K) and observation in situ by electron paramagnetic resonance (EPR). Isolated vacancies have been observed as well as divacancies and higher aggregates of vacanies. Also a large number of vacancy-impurity pairs have been identified. Isolated interstitial silicon atoms have eluded detection but a variety of interstitial-impurity pairs, and possibly di-interstitials, have been studied. Current interests center around the effect of electron-hole recombination at the defects on their mobility, stability, and reaction kinetics. Evidence will be cited that the energy released upon recombination at a vacancy can cause it to diffuse at hermally through the lattice. The failure to detect isolated interstitial silicon has also been attributed to its lack of stability in the presence of ionizing radiation.