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Thin Oxide for Submicron Devices: An Overview and Status Report
並列摘要
Some properties of thin oxides (＜ 15 nm) are different from those of the thicker ones. The structure and refractive index of such thin oxides have dramatic thickness dependence. The interfacial layer also has a different structure at such a thickness. Trap origins have been studied and methods of elimination were discussed in which the tradeoff correlation between the density of electron traps and hole traps was presented. Current topics, related to devices studied in our laboratory, including oxides between poly/Si in a BiCMOS structure, electron trapping of LDDnMOS and thin ONO multi-layers structure are also discussed.
並列關鍵字
無資料被引用紀錄
鄭嵩樺（2015）。磁性薄膜在外加磁場下的X光反射率研究〔碩士論文，淡江大學〕。華藝線上圖書館。https://doi.org/10.6846/TKU.2015.00161
歐顓豪（2013）。磁性薄膜表面與介面結構之X光反射率研究〔碩士論文，淡江大學〕。華藝線上圖書館。https://doi.org/10.6846/TKU.2013.00744
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