We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400-1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitation spot.
為了持續優化網站功能與使用者體驗,本網站將Cookies分析技術用於網站營運、分析和個人化服務之目的。
若您繼續瀏覽本網站,即表示您同意本網站使用Cookies。