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以電沉積法製作大面積氧化鋅薄膜與奈米柱陣列

Large Area ZnO Films and Nanorod Arrays by Electrodeposition

摘要


ZnO薄膜由於具許多優良性質,如壓電、導電及光發射等特性,因此在感測器、表面聲波元件、透明導電膜及螢光材料等許多方面引起很大注意力。在本實驗中,我們使用定電位與定電流兩種電沉積方式在ITO玻璃上生長ZnO薄膜,以研究其不同之沉積機制。同時,藉由XRD、SEM、EPMA、EDS和UV-Visible等分析儀器,觀察量測電沉積ZnO之晶體結構、表面形態及光穿透率。由XRD可得知優選方位爲(002),其繞射峰強度會隨沉積時間和酸鹼值增加而增大。此外,SEM顯示電沉積ZnO爲六角柱狀晶粒,其c軸生長方向是垂直於底材。實驗結果亦顯示,在定電位沉積模式下,所沉積的ZnO薄膜,結晶顆粒較小,均勻度和光穿透率較高;光穿透率在700nm時約爲90%。同時我們也利用AAO模板電沉積ZnO奈米柱,利用SEM及AFM進行觀察其成長情形。

並列摘要


Zinc oxide (ZnO) films have attracted much attention for use as sensors, surface acoustic wave elements, transparent conductive film, and fluorescent materials because of their piezoelectric effects, conductive effects, light emission effects, and so on. In this study, two different electrodeposition methods (constant-potential and constant-current) have been applied to investigate the formation mechanism of ZnO on indium tin oxide (ITO). The crystallinity, surface morphology, composition and transmittance of the deposition ZnO on ITO substrate were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), electron probe X-ray microanalyzer (EPMA), and UV-Visible Spectrometer. XRD shows a preferential orientation (002) that increases strongly, in direct ratio with deposition time and pH value. Additionally, SEM micrographs show the ZnO electrodeposits consisted of columnar grains, which grew with c axis perpendicular to the substrate. Furthermore, experimental results indicate that smaller grains, uniformity and higher transmittance of ZnO films result from electrodeposition under constant-potential. The transmittance at 700 nm for ZnO thin films prepared by electrochemical deposition approached 90%. In this paper, we also report on the structure of electrodeposited ZnO nanorods on anodized aluminum oxide (AAO) template. The morphology examination of the ZnO/AAO nanorods were carried out by SEM and AFM.

被引用紀錄


Dai, C. W. (2012). 以微陽極導引電鍍法沉積奈米氧化鋅薄膜 [master's thesis, National Central University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0031-1903201314443290

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