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Al, Sc co-doped ZnO與ITO透明導電薄膜在3.5% NaCl中之腐蝕行爲

Corrosion Behavior of Al, Sc co-doped ZnO and ITO Thin Films in 3.5% NaCl Solutions

摘要


The corrosion behavior of Al, Sc co-doped zinc oxide films in 3.5% NaCl solutions was investigated. The outcome was compared with that of a commercial indium tin oxide (ITO) thin film. Electrochemical studies revealed that the corrosion resistance of the films increased in the order Al doped zinc oxide (AZO)<Sc co-doped AZO<ITO<annealed AZO (at 300 ℃ for 1h). The AZO doped with a higher Sc-content was more resistant to corrosion. Examining the surface morphology through atomic force microscope (AFM) and scanning electron microscope (SEM), we found that the film more susceptible to corrosion exhibited a rougher surface. The higher Sc-dopant concentration in the film the more stable it is to maintain a higher transmittance. The most corrosion-resistant specimen (i.e., Sc-doped AZO annealed at 300 ℃ for 1h) owed its resistance to a complete release of the lattice strain.

並列摘要


The corrosion behavior of Al, Sc co-doped zinc oxide films in 3.5% NaCl solutions was investigated. The outcome was compared with that of a commercial indium tin oxide (ITO) thin film. Electrochemical studies revealed that the corrosion resistance of the films increased in the order Al doped zinc oxide (AZO)<Sc co-doped AZO<ITO<annealed AZO (at 300 ℃ for 1h). The AZO doped with a higher Sc-content was more resistant to corrosion. Examining the surface morphology through atomic force microscope (AFM) and scanning electron microscope (SEM), we found that the film more susceptible to corrosion exhibited a rougher surface. The higher Sc-dopant concentration in the film the more stable it is to maintain a higher transmittance. The most corrosion-resistant specimen (i.e., Sc-doped AZO annealed at 300 ℃ for 1h) owed its resistance to a complete release of the lattice strain.

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