P型快閃記憶體寫入效率之探討

The Analysis of Programming Efficiency in P-channel Flash Memories

陳勝利(Shen-Li Chen) ； 曾德彰(Der-Jang Tseng)

《大葉學報》 8卷2期 (1999/12) Pp. 103-109

https://doi.org/10.7119/JDYU.199912.0103

摘要

在本文中，我們擬針對次微米P型快閃記憶體（P-channel flash memory）的寫入過程做深入探討與研究。在快閃記憶體的特性分析上，我們較關心的是資料的寫入效率等方面，若能以正確的元件模型適切地預測出浮動閘上的電荷改變量，則便能判別資料的儲存情形。對P型快閃記憶體，我們使用一個能精確說明寫入電荷量的模型，此模型稱為通道熱電洞產生熱電子電流模型（channel-hot-hole-induced-hot-electron current model），這將不同於一般N型快閃記憶體常使用的F-N穿隧寫入與通道熱載子模型。因此在熱載子注入效率的研究上，我們將針對寫入過程中臨限電壓相對於時間之改變量做深入的探討，同時將與N通道快閃記憶體作比較。

關鍵字

快閃記憶體 ； 臨限電壓 ； 寫入效率

並列摘要

In this paper, we will investigate the threshold voltage alteration during the programming operation of a submicron P-channel flash memory. If the change of charge on the floating gate can be accurately predicted, then the shifting of device threshold voltage and the data storage can be discriminated. Unlike for the N-channel flash memory, which the most used programming method is F-N tunneling scheme or channel-hot-electron (CHE) scheme overcoming the floating gate barrier, the proposed programming model, which is called Channel-Hot-Hole-Induced-Hot-Electron Current Model, in the P-channel flash memory devices can be used to accurately calculate the charge injection. Eventually, a comparison between the P-channel flash memory and N-channel flash memory will be also made.

並列關鍵字

flash memory ； threshold voltage ； programming efficiency