Double Insulating Layer of IGZO TFT

IGZO TFT之雙絕緣層

翁晉笠(Jin-Li Weng)

《國立金門大學學報》 9卷1期 (2021/03) Pp. 63-72

摘要

In this study, Y_2O_3, HfO_2, Al_2O_3 was evaluated as a gate insulator for thin film transistors fabricated using an amorphous InGaZnO (α-IGZO) active layer. The RMS roughness of the Y_2O_3 film was improved from 0.498 nm to 0.221 nm by employing an RF (magnetron sputtering) Al_2O_3 underlayer. Using the optimized Y_2O_3 deposition conditions, thin film transistors (TFTs) were fabricated on a glass substrate. The important TFT device parameters of the on/off current ratio, sub-threshold swing, threshold voltage, and electric field mobility were measured to be 4.7×10^4, 0.18 V/dec, -0.3 V, and 11.7 cm^2/Vs, respectively. The stacked insulator consisting of Y_2O_3/Al_2O_3 was highly effective in enhancing the device properties.

關鍵字

Y_2O_3 ； HfO_2 ； Al_2O_3 ； Double insulation

並列摘要

在這項研究中，Y_2O_3、HfO_2、Al_2O_3被評估為使用非晶InGaZnO（α-IGZO）通道層製造的薄膜電晶體的柵極絕緣層。透過使用RF（磁控濺射）Al_2O_3底層將Y_2O_3膜的RMS粗糙度從0.498 nm降低到0.221 nm。使用優化的Y_2O_3沉積條件，在玻璃基板上製造了薄膜晶體管（TFT）。TFT元件的重要參數分別為開／關電流比，亞閾值擺幅，臨界電壓值和電場遷移率，分別為4.7×10^4，0.18 V/dec，-0.3 V和11.7 cm^2/Vs。由Y_2O_3/Al_2O_3組成的堆疊式絕緣層在增強器件性能方面非常有效。

並列關鍵字

Y_2O_3 ； HfO_2 ； Al_2O_3 ； 雙層絕緣

參考文獻

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