利用銀奈米顆粒為催化劑經由氣液固相生長模式所製作摻鎵氧化鋅奈米針的生長方向與晶格結構研究

Growth Orientations and Crystal Structures of Ga-doped ZnO Nanoneedles Using Ag Nanoparticles as Catalyst in Vapor-liquid-solid Growth

翁啟銘(Chi-Ming Weng)

指導教授 ： 楊志忠

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2016年)

https://doi.org/10.6342/NTU201601176

摘要

無資料

關鍵字

穿透式電子顯微鏡 ； 氧化鋅 ； 奈米針

並列摘要

The controlling mechanism for determining the growth direction of a Ga-doped ZnO (GaZnO) nanoneedle (NN) by using an Ag nanoparticle (NP) as vapor-liquid-solid (VLS) growth catalyst in molecular beam epitaxy (MBE) is disclosed. It is found that the local Ag (111) orientation of the catalytic Ag portion in an Ag NP determines the ZnO (002) orientation of the grown GaZnO and hence the NN growth direction. The ZnO (002) plane of the grown GaZnO is always parallel with the Ag (111) planes of the Ag portions involved in VLS growth in either the top or bottom Ag NP of an NN. When GaN is used as NN growth template, at a sufficiently high temperature (350-450 oC), a small Ag NP can become a quasi-single crystal with its Ag (111) plane consistent with the GaN (002) plane and hence results in the growth of a vertical GaZnO NN. However, tilted NNs can be grown from a large Ag NP or a cluster of Ag NP on GaN due to its non-uniform Ag (111) orientation distribution. At the early stage of GaZnO growth, GaZnO precipitation can be observed between Ag layers within an Ag NP, indicating the growth of a semiconductor on Ag. On other templates, like Si, sapphire, or SiO2, single-crystal Ag NP cannot be formed such that GaZnO NNs of random orientations are grown.

並列關鍵字

Transmission Electron Microscopy ； ZnO ； Nanoneedle

參考文獻

[96] Chia-Chun Chen, Chun-Chia Yeh , Chun-Ho Chen , Min-Yuan Yu , Hsiang-Lin Liu , Jih-Jen Wu , Kuei-Hsein Chen ,Li-Chyong Chen ,Jin-Yuan Peng, and Yang-Fang Chen, “Catalytic Growth and Characterization of Gallium Nitride Nanowires,” J. Am. Chem. Soc.123, 2791–2798 (2001)

[1] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432, 488-492 (2004).

[2] H. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “Transparent conducting oxides for electrode applications in light emitting and absorbing devices,” Superlattices and Microstructures 48, 458-484 (2010).

[3] M. Tadatsugu, “Transparent conducting oxide semiconductors for transparent electrodes,” Sci. Technol. 20, S35 (2005).

[4] G. J. Exarhos, and X. D. Zhou,“Discovery-based design of transparent conducting oxide films,” Thin Solid Films 515, 7025-7052 (2007).