射頻濺鍍氧化鎵在多晶矽基板上之發光二極體特性研究

Characterization of GaOx Light Emitting Diodes Fabricated on Poly-Si substrates by RF-Sputtering

黃柏詠(Bo-Yong Huang)

指導教授 ： 彭隆瀚

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2021年)

https://doi.org/10.6342/NTU202100756

摘要

本論文主要探討射頻濺鍍系統製作氧化鎵/多晶矽發光二極體元件與特性量測。內容分為兩部分，第一部分為介紹射頻濺鍍系統原理，第二部分為氧化鎵/多晶矽發光二極體元件材料分析，第三部分為氧化鎵/多晶矽發光二極體元件製作與電性和光學量測。
首先，本文敘述利用射頻濺鍍系統成長氧化鎵，並且使用α-step、XPS、XRD等量測技術，分析氧化鎵之成分。從XRD結果得知在29.5°有(400)晶格方向，而在61.5°有(-603)晶格方向，與β-Ga2O3的晶格方向相似，而由XPS材料分析得知氧化鎵/多晶矽介面結構之能帶位置。
　　吾人以射頻濺鍍系統進行發光二極體之製作，並量測其電壓-電流特性、電致發光頻譜。利用射頻濺鍍系統製作三種不同堆疊結構之發光二極體，並分析及比較其特性，結果顯示，在吾人增添電子穿隧層的元件中，其發光強度由原先200 counts上升至1000 counts，且同電壓下電流也由原本5V/50mA下降至5V/5mA。且輻射光譜擁有紅綠藍三色光可應用，能使得自發光二極體未來發展更有可看性。

關鍵字

氧化鎵 ； 發光二極體

並列摘要

This thesis mainly discusses the fabrication and characterization of gallium oxide/polysilicon light-emitting diode prepared by using a Radio Frequency sputtering system. The content is divided into two parts. The first part is to introduce the principle of the Radio Frequency sputtering system. The second part is the analysis of the gallium oxide/polysilicon light-emitting diode material properties and structures. The third part is the fabrication and characterization of the gallium oxide/polysilicon light-emitting diodes.
This thesis describes the use of a Radio Frequency sputtering system to deposit gallium oxide, and the use of α-step, X-ray photoelectron spectroscopy, X-ray diffraction and other measurement techniques to analyze the material composition of gallium oxide. From the XRD results, it is known that there is a peak aligned to corresponding to (400) lattice plane at 2θ=29.5° and another XRD peak due to (-603) lattice plane at 2θ=61.5°, which is similar to the lattice direction of β-Ga2O3. The XPS material analysis shows that gallium oxide/polysilicon energy band position of the interface structure.
We use a Radio Frequency sputtering system to fabricate light-emitting diodes, and measure their voltage-current characteristics and electroluminescence spectra. The Radio Frequency sputtering system was used to fabricate three different stacked structures of light-emitting diodes, and their characteristics were analyzed and compared. The results showed that the luminous intensity of the device with an electron tunneling layer increased from 200 counts to 1000 counts. Under the same bias voltage, at 5 volts device driving the current also drops from 50mA to 5mA. In addition, the emission was found to have red, green and blue spectral peaks, which make themselves a self-luminous white light diodes more expectability.

並列關鍵字

Gallium Oxide ； Light Emitting Diode

參考文獻

李柏廷, “電漿輔助型原子層沉積之發光二極體特性研究”, 國立台灣大學光電工程學研究所碩士論文(2014).

http://www.lightemittingdiodes.org/

http://www.nichia.co.jp/en/about_nichia/index.html

Audrius Alkauskas, Matthew D. McCluskey, and Chris G. Van de Walle,“Tutorial: Defects in semiconductors—Combining experiment and theory,”J. Appl. Phys. 119, 181101 (2016).

http://finance.people.com.cn/BIG5/n/2012/1022/c349966-19346794.html