本篇論文主要在探討同心圓金氧半穿隧元件於光感測方面之應用,該元件為一同心圓結構,由內部圓形元件及外環元件所組成。在本論文之第一章介紹了金氧半穿隧元件的基本電性與原理,元件電性對於少數載子數量極為敏感的特性為其能應用在光感測方面的主要原因。本論文之第二章探討了內圓及外環在此同心圓結構中的角色,一般而言,當同心圓金氧半穿隧元件作為光感測器應用時,內圓通常做為感測器而外環作為控制閘。我們交換兩者角色,以外環作為光感測器而內圓做為控制閘,並比較兩種操作方式帶來的結果差別。由於不對稱耦合效應,我們在以外環作為光感測器而內圓做為控制閘時,觀察到較佳的光靈敏度。本論文之第三章,我們進而提出將開路電壓作為光偵測的訊號端,可有效降低元件功耗。當利用開路電壓取代電流作為光偵測訊號時,沒有電流通過光感測器,因此元件功耗得以大幅降低。此外,由於第二章所提及的不對稱耦合效應,光靈敏度在以外環作為光感測器而內圓做為控制閘時,在此開路操作下也有顯著提升,且在弱光環境下尤為明顯。綜上所述,我們透過開路感測操作以及交換傳統內圓和外環的角色 (內閘偏壓外環開路感測),達到高靈敏度低功耗的同心圓金氧半光感測元件,在弱光偵測上展現相當的應用潛力。
In this thesis, the characteristics of concentric MIS tunnel diodes for photo sensing application have been investigated. The concentric MIS structure contains an inner circle and an outer ring, and the fundamental electrical characteristics are demonstrated in Chapter 1 . The characteristics of MIS tunnel diodes are sensitive to the amount of minority carriers, which enables MIS tunnel diodes in photo sensing application with remarkable performance. In Chapter 2 , the roles of inner circle and outer ring in concentric MIS tunnel diodes are discussed. Photo sensing results in ISOG (inner sensor outer gate) and IGOS (inner gate outer sensor) operations are compared, and better photo-sensitivity is observed in IGOS operation, contributing from asymmetric coupling effect in concentric MIS tunnel diodes. In Chapter 3 , a novel photo sensing method utilizing open-circuit operation is proposed. Through sensing light by measuring open-circuit voltage instead of the light current, the sensor keeps floating during sensing and results in extremely low power consumption of the device. Furthermore, due to asymmetric coupling effect, photo-sensitivity is also highly improved in IGOS operation, especially when under extremely weak light environment. Therefore, enhanced photo sensing and considerably lowered power consumption are both achieved in concentric MIS tunnel diodes, indicating potential application for weak light sensing.
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