赤銅鐵礦結構之CuCrO2是具有潛力成為p-type透明半導體薄膜的材料之一,但由於CuCrO2的光電性質仍不足以實際應用,因此期望能藉由摻雜異質原子(Mg 原子)以及改變其它相關製程參數,而得到更高的光學穿透率及較佳的導電率之CuCrO2薄膜。 本研究在於探討以化學溶液法於玻璃基板上製備赤銅鐵礦結構之CuCrO2:Mg薄膜。嘗試以金屬醋酸鹽作為金屬來源配製前驅溶液,將前驅溶液以旋轉塗佈法在玻璃基板上成膜,利用不同熱處理之氣氛及溫度條件以求得到純相之CuCrO2薄膜。熱處理後之試片利用X光繞射分析結構、以UV-Visible分析穿透率、以四點探針及霍爾效應量測電性。以含5%H2之N2氣氛下升溫至400°C持溫15分鐘,將氣氛切換成N2升溫至500°C退火60分鐘之二階段退火法可得到純相的CuCrO2薄膜。含5%H2之N2氣氛之退火將二價銅離子還原成一價而抑制了尖晶石型之CuCr2O4的形成,而可在600°C即可得到傳導性質較佳的CuCr0.95Mg0.05O2膜,且該薄膜之可見光之穿透率大於50%、電阻率為0.31 Ω-cm之p 型導電膜。
Delafossite type of CuCrO2 is the one of the potential candidates for p-type transparent semiconductor thin films. Due to the optical and electrical properties of the CuCrO2 films have not yet reached the optimal values, doping impurities such as Mg atoms and changing prccess parameters may improve the transparency and conductivity of CuCrO2 films. Delafossite type Mg doped copper-chromium oxide (CuCrO2: Mg) thin films have been prepared on glass substrate by chemical solution deposition. Metal acetate salts were examined as metal sources in the precursor solution for the preparation of CuCrO2: Mg thin films. Heat treatment conditions, such as ambient gas and temperature were investigated for realize pure CuCrO2 phase p-type conductive thin films. Annealed samples were investigated by X-ray diffraction, scanning electron microscopy and electrical measurement. Single phase delafossite CuCrO2 structure were obtained by subsequent two step annealing at 400°C in 5% forming gas ambient then rise up to 500°C in nitrogen atmosphere for 60 min, respectively. Forming gas annealing reduced Cu(II) ion to Cu(I), which reaction inhibited the formation of spinel-type CuCr2O4 and allow p-type CuCr0.95Mg0.05O2 film formed at 600°C, which resistivity of 0.31 Ω-cm with optical transmissions of 50% in visible region was achieved.