Bi4-xNdxTi3O12鐵電薄膜製備及其電性研究

Studies on Preparation and Electrical Properties of (Bi4-XNdX)Ti3O12 Ferroelectric Thin Films

顏堃展(Kun-Jhan Yan)

指導教授 ： 邱德威

國立臺北科技大學/工程學院/材料科學與工程研究所/碩士(2010年)

https://doi.org/10.6841/NTUT.2010.00052

摘要

以Bi4Ti3O12(BTO)為主的材料，透過添加其它元素來改善其特性不良的缺點並提高其鐵電特性等。在最近的研究中，大都在BTO中添加鑭 (La) 來增加結構的穩定，在文獻中所顯示添加釹 (Nd) 的鐵電性質都添加La更加優越，透過摻雜具有優越的鐵電特性。所以近來廣泛被研究，而鉍釹鈦 (Bi4-XNdXTi3O12)為一種層狀鈣鈦礦結構之鐵電薄膜，多用於非揮發性記憶體元件。
因此本研究主要是利用化學溶液法，以硝酸鉍、硝酸釹、四丁氧基鈦作起始原料，製備所需之Bi3.15Nd0.85Ti3O12前驅液，再利用旋轉塗佈法分別在Pt/Ti/SiO2/Si、ITO/Glass基板上鍍製薄膜，探討不同的熱處理條件對Bi3.15Nd0.85Ti3O12鐵電薄膜電性質的影響。
實驗結果發現使用Pt/Ti/SiO2/Si基板，退火溫度在750 oC時2Pr與Ec值約為38.1 μC/cm2與183 kV/cm，在150 kV/cm電場作用下之漏電流為9.48x10-6 A/cm2，介電常數與介電損失則分別為175與0.047。並探討在ITO玻璃上鍍製Bi3.15Nd0.85Ti3O12鐵電薄膜，其發展透明記憶元件的可行性，實驗結果顯示在可見光範圍內其穿透率約為83%。

關鍵字

鐵電薄膜 ； Bi3.15Nd0.85Ti3O12 ； 化學溶液法

並列摘要

Dopping suitable trivalent rare-earth ions could improve ferroelectric properties of Bi4Ti3O12 (BTO) based materials. B site of BTO can be substituted by lanthanide (La) to increase the stability of the structure, It has been reported that neodymium (Nd)-substituted Bi4Ti3O12 (Bi4-XNdXTi3O12, BNdT) exhibited better ferroelectric properties. Thus, Neodymium-substituted bismuth titanate (Bi4-XNdXTi3O12) thin films with bismuth-layered perovskite structure have been studied widely for the application of non-volatile of memory devices.
In this study, BNdT thin films were prepared on Pt/Ti/SiO2/Si, ITO/Glass substrates by chemical solution deposition method. Bismuth nitrate, neodymium nitrate, titaniumn butoxide were used as starting materials to prepare the BNdT precursor solution, The effects of heat treatment conditions for the electrical properties of Bi3.15Nd0.85Ti3O12 ferroelectric thin films were investigated.
The BNdT thin films prepared on Pt/Ti/SiO2/Si substrate annealed at 750 oC shows larges remanent polarization and coercive field are 38.1 μC/cm2 and 183 kV/cm, respectively. The leakage current are 9.48

並列關鍵字

ferroelectric thin film ； Bi3.15Nd0.85Ti3O12 ； Cemical Solution Deposition

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