製程中晶圓(wafer)及晶圓傳送盒(FOUP)會受到許多次汙染,以蝕刻製程為例,晶圓經過蝕刻製程, 汙染物以氣態分子汙染物(AMC, Airborne Molecular Contaminant)形式揮發後附著在FOUP壁面,進入下一道製程,附著於FOUP壁面的AMC可能再次揮發,並附著於下一批晶圓,如此反覆幾道程序,會嚴重影響晶圓的製程良率,所以製程時FOUP開門瞬間的氣流場非常重要。本實驗建立一套完整測試流程,利用流場可視化技術,針對不同FFU下吹氣流流速下,量測FOUP/LPU在連續晶圓盒載卸動作下FOUP內部之流場行為及內部容易滯留汙染微粒之區域。實驗量測發現FOUP開門瞬間,FFU下吹氣流從開口處往FOUP內灌,如此不但無法將AMC帶走,反而將AMC全部吹至壁面。門完全開啟後,FOUP內部裝設晶圓之流場行為與無裝設晶圓者不同。 FFU下吹氣流流速較低時,氣流並未完全往微環境移動。有充填裝置之FOUP關門時,氣流沿著壁面打轉,而門扉開啟的情況下則藉由充填孔將氣流導引至微環境。有充填裝置加裝導流管之FOUP關門時,導流管噴射氣流與逆向氣流會於晶圓間隔處形成擾流,而門扉開啟情況下導流管噴射氣流均勻的將FOUP內部氣流導引微環境中。其中以有充填裝置加裝導流管之FOUP於門扉開啟情況下最利於將汙染物向微環境移除。
The FOUP plays an important role for contamination control. Wafer and FOUP may be contaminated during the manufacturing processes. An example is that after the processes of etching, the contaminant, as a form of airborne molecular contaminant (AMC), may evaporate, deposit, and contaminate wafers in the later processes. The deposited AMC may, again, evaporate and deposit on the wafer. A laser flow visualization system was used to study the flow patterns when FOUP door is in the open process. Results show that in the instance when the FOUP door is just opening, the downward flow from FFU was toward to the upper part of the FOUP. The downward flow becomes toward to the FOUP in the lower part and outward in the upper part of the FOUP when door was wholly opened. Very low downward velocity of FFU case exhibits an incomplete outward flow pattern. For FOUP with inject plenum, when the FOUP door is closed, the collision of air jet from the inject plenum and the invading airflow from mini-environment forms the turbulence between the gaps of wafers. The air jet from the inject plenum pushes the air inside FOUP towards the mini-environment as the FOUP door is opened.