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  • 學位論文

利用射頻磁控濺鍍法在氧化矽基板上 成長石墨烯

Synthesis of graphene on silicon substrate by RF magnetron sputtering process

指導教授 : 王錫九
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摘要


過去近十年,石墨烯的特性受到廣泛的研究,其特性包括擁有良好的電子遷移率,極佳的熱傳導率、較高的電傳導率、極大的比表面積,以及光學穿透等特性。目前,科學家已能利用各種合成技術製造出單層石墨烯,但在層數的控制上仍是一項很大的挑戰。而在半導體元件的應用上,仍需透過轉移過程使石墨烯移至絕緣基板上,且轉移的過程會使石墨烯的缺陷增加,品質下降。 而本研究目的是希望開發一新製程,無需透過轉移過程,直接將石墨烯合成於絕緣氧化矽基板之上。本研究使用射頻磁控濺鍍法,在氧化矽基板上沉積一層銅薄膜,之後在此結構上再濺鍍一層非晶碳膜,經900℃真空下(1mtorr)熱處理5分鐘後,利用0.1M氯化鐵溶液進行溼蝕刻,最後再用去離子水清洗,所得到之石墨烯將遺留在氧化矽基板上。本研究條件銅膜厚度控制在100nm到500nm之間;非晶碳膜厚度固定在3nm。在本研究實驗包括三個步驟: (一)基板溫度對銅膜層的完整性、(二)銅膜厚度對銅膜層的完整性、(三)不同濺鍍銅及濺鍍碳下的基板溫度。首先比較基板溫度為常溫以及基板溫度600℃對銅膜之連續性,結果顯示基板加熱比基板為常溫較佳,銅膜愈厚時,連續性也連佳。在不同的濺鍍碳時的基板溫度,當基板溫度大於400℃及基板溫度小200℃時均未能生成石墨烯。 本研究的主要機制是利用碳原子能在高溫下藉由銅晶界擴散,最後再利用溼蝕刻方法,將銅膜蝕刻後所得之石墨烯,經由拉曼光譜及光學顯微鏡及電子顯微鏡檢測,發現除了出現碳元素的特徵峰G band (1580cm-1)外,在2D band (2680cm-1)處則出現明顯的散射峰出現,表示擁有完美的六環型結構,同時在D band(1350cm-1)也出現散射峰,由文獻可知,此一層層結構具有石墨烯的拉曼特徵峰,由D band的存在可知仍有很高的缺陷存在,我們希望利用此種製程以後可以應用於半導體元件上。

並列摘要


Over the past decade, the characteristics of graphene with good electron mobility, excellent thermal conductivity, high electrical conductivity, a great surface area, and the optical penetration characteristics have been extensive researched. Currently, scientists have been able to synthesize single layer graphene by varieties techniques. However, it is still a big challenge to control the number of layers of graphene films. For the application of the semiconductor devices, it has to move graphene films to the substrate by transferring process and thus it increased the possibility of defects and lowered the quality of graphene films. The purpose of this study is to develop a new process that can synthesize graphene on the top of the substrate. In this study, Cu film was deposited on silicon substrate by the RF magnetron sputtering method, and the C film was deposited on the Cu/SiO2. The C/Cu/SiO2 was heat treatment in vacuum furnace at 900℃ for 5minutes . The as-grown sample was etched using solution of ferric chloride, and washed with deionized water, Graphene left on the silicon substrate. In this study, the thickness of Cu film was controlled among 100nm and 500nm. Carbon film was constantly at 3nm. In this study included three parts: (a) the continuity of C/Cu films between different substrate temperature. (b) the continuity of C/Cu film with different thickness of Cu film, (c) the effect of different substrate temperature as Cu film or C film was deposited. Firstly, we compared to the continuity of C/Cu films as Cu film was deposited between heating substrate and post annealing. The results showed that the continuity of C/Cu film with heating substrate better than post annealing after heat treatment in vacuum furnace. The thicker the copper film, the continuous was well. There was no graphene film grown as the substrate temperature of sputtering carbon was high than 400℃ and below 200℃. The main mechanisms of this study was carbon atomic could diffuse through Cu grain boundaries at high temperature. We using the wet etching method, graphene was obtained after the etching the Cu film, and was characterized by Raman spectroscopy and optical microscopy and electron microscopy. We found that in addition to the characteristic peaks appear carbon G band (1580cm-1), but in 2D band (2680cm-1) at the apparent scattering peaks, which means have a perfect six ring structure, while in the D band (1350cm-1) also appeared scattering peak, the literature shows that this structure has layers of graphene Raman peaks, the D band is still very high presence of known defects exist, we want to take advantage of this process after the semiconductor elements can be used

並列關鍵字

Graphene PVD Raman spectroscopy

參考文獻


[63] 黃政諺, "感應加熱法合成大面積石墨膜及特性分析," 碩士論文, 國立臺北科技大學材料科學與工程研究所, 臺北, 2011.
[6] Rao, C. N. R., Biswas, K., Subrahmanyam, K. S. and Govindaraj, A., "Graphene, the new nanocarbon," J. Mater. Chem., vol. 19, no. 17, 2009, pp. 2457-2469.
[2] Novoselov, K. S., Jiang, Z., Zhang, Y., Morozov, S. V., Stormer, H. L., Zeitler, U., Maan, J. C., Boebinger, G. S., Kim, P. and Geim, A. K., "Room-Temperature Quantum Hall Effect in Graphene," Science, vol. 315, no. 8517, 2007, pp. 1379.
[3] Han, M. Y., Oezyilmaz, B., Zhang, Y. and Kim, P., "Energy Band-Gap Engineering of Graphene Nanoribbons," Phys. Rev. Lett, vol. 98, no. 20, 2007, pp. 206850.
[4] Lee, C., Wei, X., Kysar, J. W. and Hone, J., "Measurement of the elastic properties and intrinsic strength of monolayer graphene," Science, vol. 321, no. 5887, 2008, pp. 385-388.

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