同排聚丙烯/奈米銅線之奈米複合材料

導電性高分子複合材料具有輕量化、耐腐蝕及優異的加工性，因此成為光、電、磁等特性應用研究之重點。本研究之目的是發展具導電性的同排聚丙烯/奈米銅線奈米複合材料，備製時以氯化銅為前驅物、十六烷基胺(HDA)為保護劑及葡萄糖為還原劑，採用化學還原法合成奈米銅線，應用紫外光/可見光譜儀和掃描式電子顯微鏡分析純化後奈米銅線之可見光吸收峰值和纖維形態，再以溶液混摻法製備同排聚丙烯/奈米銅線複合材料，應用熱示差掃描卡量計、掃描式電子顯微鏡、X光繞射儀和高電阻測試儀進行分析，再以所測得體積電阻率代入Power law equation計算出複合材料之導電閥值濃度。本研究製備之最佳奈米銅線數據之直徑為66±16 nm 和長度為32±12μm，添加1.25 vol%奈米銅線之同排聚丙烯/奈米銅線複合材料可使體積電阻率從5.44 x 10^14 Ω•cm降低到4.03 x 10^6 Ω•cm透過Power law equation: ρ = ρo ( V – Vc )^(-t)計算導電閥值濃度(Vc)為0.237 vol%。本研究製備之奈米銅線其直徑小於100 nm，符合一維奈米材料規格，且同排聚丙烯/奈米銅線複合材料之表面電阻率為2.70 x 10^8 Ω/sq，適合靜電消散型複合材料(電阻範圍為10^5-10^9 Ω/sq)之應用。

關鍵字

導電複合材料；奈米銅線；化學還原；同排聚丙烯；導電閥值濃度

並列摘要

In recent years, synthesis of copper nanowires has been attracting many attentions because of their high cost/performance ratio. Polymer composites possessed the advantages of light weight, corrosion resistance and processability while preserving conductive. The object of this study is to investigate the electrical properties of isotactic polypropylene/copper nanowires (i-PP/CuNWs). CuNWs were prepared by chemical reduction of CuCl2 and using the hexadecylamine (HDA) as a capping agent. Conductive i-PP/CuNWs composites were prepared by solution blending. The light absorbance and the morphology of CuNWs were characterized by UV-visible spectrophotometry and SEM. To find the percolation threshold concentration, the fit of the electrical resistivity data with the power law equation: ρ = ρo (V – Vc)^(-t) based on the percolation theory was used. The diameters of the copper nanowires are between 50 to 100 nm which can be seen as 1-D nanomaterials. A low percolation threshold value of 0.237 vol% for i-PP/CuNWs composites were obtained.

並列關鍵字

isotactic polypropylene ； copper nanowires ； chemical reduction ； conductive composites ； conductive threshold concentration

參考文獻

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國際替代計量

同排聚丙烯/奈米銅線之奈米複合材料

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