- 學位論文
異質元素摻雜對氧化鋅錫薄膜電晶體穩定性提升之研究
Improved stability characteristics of solution-processed zinc tin oxide thin-film transistor by impurity doping
若您是本文的作者，可授權文章由華藝線上圖書館中協助推廣。
並列摘要
延伸閱讀
- 陳炳茂、王聖文、吳明瑞、鄧立峯、劉柏村（2013）。氧化錫成份對透明鋁鋅錫氧化物薄膜電晶體的影響研究。明新學報，39(2)，1-15。https://www.airitilibrary.com/Article/Detail?DocID=1728760X-201308-201311060048-201311060048-1-15
- Lin, Y. Y. (2014). 以原子層沉積技術製備氧化鋅薄膜電晶體之穩定性、電性以及可撓曲性研究 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2014.00783
- Huang, W. L. (2015). 氫摻雜非晶相銦鎵鋅氧化物薄膜電晶體之電性及穩定度分析 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2015.10696
- Hung, C. C. (2013). Enhancement of IGZO Thin Film Transistor Properties and the Corresponding Application on Protein Sensing [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2013.10904
- Su, L. Y. (2010). A Comprehensive Study of the Mechanism of the Bias Temperature Instability on Zinc Oxide Thin Film Transistors [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2010.01436