矽化鎳蕭特基接面與蕭特基電晶體之研究

Study of Schottky Junctions and Schottky Barrier MOSFETs with Nickel Silicide

陳彥甫(Yied-Fu Chen)

指導教授 ： 施君興

元智大學/電機通訊學院/電機工程學系/碩士(2007年)

https://doi.org/10.6838/YZU.2007.00337

摘要

本論文主要探討蕭特基電晶體的元件特性以及如何應用金屬矽化鎳技術來實現之所需的汲、源極蕭特基接面，得到良好的蕭特基電晶體元件特性，以作為次世代金氧半電晶體。除元件理論探討外，經由元件模擬，深入分析各種蕭特基汲、源極結構的元件參數對蕭特基電晶體特性之影響。在此研究中可以發現，若能適當的利用分離層技術(Dopant Segregation)來調變蕭特基能障，將能有效提升矽化鎳蕭特基元件原先電流比不足的缺點。另一方面，透過蕭特基接面的實作實驗，了解矽化鎳蕭特基金屬接面的技術挑戰，透過不同的製程實驗，已能以矽化鎳技術實現具分離層和表面處理的接面結構來製作蕭特基金屬接面。

關鍵字

金屬矽化鎳 ； 蕭特基元件

並列摘要

By eliminating the implanted Source/Drain junctions, the metallic Schottky barrier MOSFETs become attracting candidates in deep sub-50 nm regime. The objectives of this thesis are to simulate and analyze the Schottky barrier MOSFETs through two-dimensional device simulations, and to develop the dopant segregated Schottky Source/Drain junction with Nickle silicidation. Through this work, it is found that the insertion of the heavily doped segregation layers can effectively modify the Schottky bar-rier to significantly increase the driving on current and to suppress the ambipolar conduction behavior. Furthermore, the key dopant segregated techniques of Ni silicide technology are fabricated, and the effects of the dopant segregation layer on silicide metal-semiconductor contact are ob-served by measurements.

並列關鍵字

Nickel Silicide ； Schottky Device

參考文獻

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