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  • 學位論文

以蠶絲蛋白為閘極絕緣層之可撓性有機薄膜電晶體

Flexible organic thin film transistors with silk fibroin as gate dielectric

指導教授 : 黃振昌
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摘要


本論文研究蠶絲蛋白介電層在有機薄膜電晶體的應用,並探討改變蠶絲蛋白之二級結構對於有機薄膜電晶體元件電性的變化。以蠶絲蛋白為介電層,沈積於軟性塑膠基板之五苯環有機薄膜電晶體,具有非常高的飽和載子遷移率23 cm2v-1s-1,且元件可在很低的工作電壓 -3 V操作。蠶絲蛋白具有很好的絕緣特性,可利用溶液製程的方式塗佈於軟性塑膠基板上面,所製成的五苯環電晶體具有很高的載子移動率,讓有機薄膜電晶體可以與金屬氧化物薄膜電晶體互相匹敵,提升五苯環有機薄膜電晶體在低電壓與高頻元件的應用可能性。 本論文發現在蠶絲蛋白成膜時,可利用烤乾的溫度來改變它的二級結構,當結構中的彎子越來越多時,有利於五苯環初期的晶體成長,並可降低元件界面缺陷密度,得到好的元件載子移動率。最佳的元件載子移動率發生於303 K,具有高的飽和載子遷移率21 cm2v-1s-1,隨著蠶絲蛋白成膜溫度從303 K 提高到393 K,彎子的結構隨著烤乾溫度升高而減少,其五苯環電晶體的元件電子特性也隨著下降。當成膜溫度達到433 K時,蠶絲蛋白膜的本身彎子的結構巨幅的下降,伴隨著具結晶性的褶板二級結構與自由基羰基的產生,導致有機薄膜電晶體的元件特性大幅下降。 蠶絲蛋白薄膜在經過甲醇浸泡處理後,可增加薄膜的二級結構的結晶性,蠶絲蛋白薄膜從水可溶性轉變形成一個水不可溶性的薄膜,因伴隨著褶板二級結構的產生,其有機薄膜電晶體的飽和載子遷移率從處理前的25 cm2V-1s-1巨幅降低為8.1 cm2V-1s-1。

並列摘要


Silk fibroin thin film is utilized as the gate insulating material for pentacene organic thin film transistors (OTFTs) fabricated on plastic substrate. A very high field effect mobility (μFE) value of 23.2 cm2V-1s-1 in the saturation regime and a low operation voltage of -3V for the pentacene OTFT made on a flexible polyethylene terephthalate (PET) plastic substrate with silk fibroin as the gate dielectric. Silk fibroin is an insulating protein, which is coated on PET at room temperature by a low-cost solution process. An inverter with a switching speed of 1 MHz is achieved even for the OTFT with large channel length (50 μm). The high device performance enables OTFTs to outperform amorphous semiconducting oxide TFTs such as a-InGaO3(ZnO)5 (a-IGZO) TFTs. The pentacene OTFTs have immediate and profound implications for flexible electronics operated at high switching frequency and low voltage. The secondary structures of silk fibroin thin films can be tuned by varying the casting temperature. Larger amount of turn is in favor of the formation of orthorhombic phase of pentacene and lower interface trap density, which leads to higher field-effect mobility. The best device characteristics occur at a casting temperature of 303 K, which exhibit a very high field-effect mobility value of 21 cm2V-1s-1 in the saturation regime. The device characteristics degrade with the reduction of turn when casting temperature increases from 303 to 393 K. An abrupt reduction of turn occurs at 433 K, accompanying with the appearance of free C=O group and β-sheet. The corresponding device performance is greatly reduced. We also present pentacene OFETs with the water-insoluble silk fibroin film by a post-treatment with methanol as the gate dielectric. The water-soluble silk fibroin dielectric exhibit high field-effect mobility value (μFE,sat) 25 cm2V-1s-1. The μFE,sat degrade to 8.1 cm2V-1s-1 owing to the formation of β-sheet crystalline structure in the water-insoluble silk fibroin film.

並列關鍵字

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參考文獻


[24] S. Lee, B. Koo, J. Shin, E. Lee, and H. Park Appl. Phys. Lett. 88, 162109 (2006)
[14] T. W. Kelley, D. V. Muyres, P. F. Baude, T. P. Smith, T. D. Jones, Mater. Res. Soc. Symposium Proceedings 2003, 771, 169.
[61] Z. An, Perylene-based Materials: Potential Components in Organic Electronics and Optoelectronics (Georgia Institute of Technology, Ph.D. thesis, 2005) p6
[1] G. H. Gelinck, H. E. A. Huitema, E. V. Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. Van der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B. H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. Van Rens, D. M. De Leeuw, Nat. Mater. 2004, 3, 106.
[4] E. Cantatore, T. C. T. Geuns, G. H. Gelinck, E. V. Veenendaal, A. F. A. Gruijthuijsen, L. Schrijnemakers, S. Drews, D. M. de Leeuw, IEEE J. Solid-State Circuits 2007, 42, 84.

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