銻基相變化記憶材料之開發與探索

Novel Sb-rich Binary Materials Extended for Phase-change Memory

張志仲(Chin-Chung Chang)

指導教授 ： 游萃蓉 ； 金重勳

國立清華大學/工學院/材料科學工程學系/博士(2011年)

https://doi.org/10.6843/NTHU.2011.00308

摘要

The purpose of this dissertation is to study Sb-rich binary materials extended for applications in phase-change memory (PCM). Studied characteristics include thin-film properties and memory-cells performance of Ga-Sb alloys and Sb-C materials, and the crystallization behavior of ultra-thin phase-change films. Finally, we propose an alloy design method to reasonably predict the ultra-fast crystallization behavior.
The Sb-rich, Ga-Sb films (91 to 77 at% Sb) exhibit a high crystallization temperature (Tx, 183 to 261 °C), and high activation energy of crystallization (Ea, 2.3 ~ 8.3 eV), resulting in good thermal stability. The kinetic exponent is smaller than 1.5 at Sb < 86 at%, denoting that the crystallization mechanism is one-dimensional crystal-growth from nuclei. The temperature corresponding to 10-year data-retention (T10Y), is 180 °C for Ga19Sb81, and 148 °C for Ga16Sb84, respectively. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier- concentration with p-type conduction. Ga16Sb84 memory cells demonstrate SET- RESET switching at pulse-width 10 ns and durability >1E5 cycles.
According to phase-diagrams, carbon and antimony are immiscible and not forming Sb-carbides. However, carbon addition is able to stabilize amorphous Sb phase. Raman and XPS spectra depict formation of C-Sb bonds in Sb-C films, which renders long-range ordering of amorphous Sb to higher crystallization temperatures. Thermal stability of amorphous Sb-C films is precipitously enhanced to show Tx of 256 and 262 °C, Ea of 3.14 and 3.52 eV, at 8 and 13 at% C, respectively. Structure of C-Sb films after full crystallization belongs to Sb phase. The T10Y of 87 at% Sb films is 168 °C. Memory test-cells made of Sb92C8 film show reversible switching at pulse-width 100 ns. It also shows the typical snapback behavior by applying I-sweep mode at the threshold voltage of 1.5 V, and full-SET at 2.1 V (snapback).
As decreasing film thickness of Ga16Sb84 films from 10 to 3 nm, the exponential increase in crystallization temperature (from 221 to 249 °C), electrical resistance ratio (1E3 to 1E5), and the stabilized Sb(Ga) phase (after annealing at 500 °C in 10nm-film) are attributed to increased specific interface-energies and inhomogeneous interfacial strain at the interfaces. This phenomenon is also observed in ultra-thin Sb films.
We propose an isothermal-heating transformation curve and a continuous-heating transformation curve, which extrapolate from Arrhenius’ and Kissinger’s plots, to predict the crystallization behavior of Sb-rich binary material under very fast ramp rate. It also provides a useful method to design suitable compositions with good thermal stability, fast crystallization speed, and good data retention ability

關鍵字

相變化記憶體 ； 結晶特性 ； 鎵銻合金 ； 碳銻材料 ； 超薄膜 ； 合金設計

並列摘要

無資料

並列關鍵字

phase-change material ； crystallization behavior ； Ga-Sb ； C-Sb ； ultra-thin film ； alloy design

參考文獻

[1] S. Lai, "Non-Volatile Memory Technologies: The Quest for Ever Lower Cost," in 2008 IEEE International Electron Devices Meeting, Technical Digest, New York, 2008, pp. 11.

[3] G. E. Moore, "Cramming more components onto integrated circuits (Reprinted from Electronics, pg 114-117, April 19, 1965)," in Proceedings of the IEEE, 1998, pp. 82.

[5] Available from: 2010 International Technology Roadmap for Semiconductor; http://www.itrs.net/home.html.

[6] A. J. Hazelton, S. Wakamoto, S. Hirukawa, M. McCallum, N. Magome, J. Ishikawa, C. Lapeyre, I. Guilmeau, S. Barnola, and S. Gaugiran, "Double-patterning requirements for optical lithography and prospects for optical extension without double patterning," Journal of Micro-Nanolithography Mems and Moems, vol. 8, p. 11, Jan. 2009.

[7] B. J. Lin, "NGL comparable to 193-nm lithography in cost, footprint, and power consumption," Microelectronic Engineering, vol. 86, pp. 442, Apr. 2009.