以電性與材料量測方法分析鈉參雜對CIGS薄膜太陽能電池的影響

Investigation of Sodium Effects on CIGS Thin Film Solar Cells by Electrical and Material Characterization

蘇裕舜(Yue-Shun Su)

指導教授 ： 賴志煌

國立清華大學/工學院/材料科學工程學系/碩士(2013年)

https://doi.org/10.6843/NTHU.2013.00126

摘要

在此工作中，我們研究鈉參雜對四元靶材濺鍍之銅銦鎵硒太陽能電池的效應。ICP-MS顯示該銅銦鎵硒薄膜屬於硒缺乏的成份。電流-電壓量測顯示鈉參雜大幅提升8.2%電池效率，同時電流阻礙的現象也被解決。電容-電壓量測顯示鈉參雜使得載子濃度提升，DLCP對溫度的變化顯示在為參雜鈉的是片當中雜處了N型的較深層缺陷。最後結合Admittance量測，我們認為鈉會把氧帶到硒空缺上，進而解決了銅銦鎵硒薄膜缺硒所造成的後續問題。

關鍵字

銅銦鎵硒 ； 鈉效應 ； 量測

並列摘要

Abstract
In this work, the sodium effect on Cu(In,Ga)Se2 thin films deposited by sputtering from a single quaternary target without any further post-selenization was investigated. Inductively-coupled plasma-mass spectrum (ICP-MS) shows the selenium concentration of CIGS films is 49.07%, which is selenium-poor. Current-voltage measurement (IV) shows a 8.2% efficiency enhancement from Na-free sample to Na-extra sample. In addition, the current blocking effect in Na-free sample cannot be seen in Na-extra sample. Subsequently, capacitance-voltage measurement (CV), admittance spectroscopy (AS), and drive-level capacitance profile (DLCP) were carried out to investigate sodium effects in our system. CV presents that Na incorporation can elevate free carrier density. AS combined with DLCP indicates that in Na-free sample there should be a large amount of selenium vacancies, which would be annihilated by Na incorporation. Photoluminescence measurement (PL) shows that Na incorporation introduces an additional peak, whose origin might be OSe. Based on the above information, it is plausible to take on the argument that sodium behaves as a catalyzer for oxygen atoms to neutralize selenium vacancies.
*corresponding author, Chih-Huang Lai [e-mail]

並列關鍵字

CIGS ； Na effect ； Measurement

參考文獻

1. Edited by Daniel Abou-Ras, T.K., and Uwe Rau, Advanced Characterization Techniques for Thin Film Solar Cells.

9. Canava, B.G., J. F.; Vigneron, J.; Lincot, D.; Etcheberry, A. In Chemical elaboration of well defined Cu(In,Ga)Se2 surfaces after aqueous oxidation etching. Pergamon-Elsevier Science Ltd, 2003: p. 1791-1796.

12. DS, A., MATER RES SOC S P, 1991,. 228(267).

14. Zhang, S.B., et al.,, Defect physics of the CuInSe_ {2} chalcopyrite semiconductor. . Physical Review B, 1998. 57((16)): p. p. 9642.

16. al, C.-H.C.e., One-step fabrication of chalcopyrite phase Cu(In,Ga)Se2 absorber layer by sputtering without post-selenization.