熱蒸鍍法與原子層化學氣相沉積之氧化銦錫奈米線與氧化銦錫/氧化鋅、氧化鉿核殼奈米線之製備與應用

Synthesis and Application of ITO and ITO/(ZnO-HfO2) core-shell nanowires by Thermal Evaporation and Atomic Layer Deposition

張文智(Wen-Chih Chang)

指導教授 ： 林樹均 ； 闕郁倫

國立清華大學/工學院/材料科學工程學系/博士(2013年)

摘要

本研究共分為四個部分討論:一跟二部分,主要探討氧化銦錫奈米線為主體的相關研究，三跟四部分則是探討氧化銦錫/(氧化鋅、氧化鉿)核殼奈米線的應用元件。在第一部分中，利用不同尺寸的奈米金顆粒做為催化劑，有效控制氧化銦錫奈米線線徑的尺寸，並發現電阻率對尺寸有相對應的變化，X光電子能譜儀的化學鍵結成分分析，了解線徑與導電因子(氧空缺-錫離子)之間競爭的關係。在第二部分中，主要探討屏蔽效應的影響，簡單地利用銅網來定義催化金膜區域並控制奈米線生長長度，藉此降低奈米線成長密度以減少屏蔽效應有效降低場發射的起始電場強度。在第三部分中，藉由熱蒸鍍法和原子層沉積技術合成氧化銦錫/氧化鋅以及氧化銦錫/氧化鉿/氧化鋅核殼奈米線系統，具有提升電子場發射的特性，經電子顯微鏡與X光電子能譜儀可鑑定奈米線表面奈米晶分佈變化與缺氧能態的存在，由形貌效應與導電因子可有效增進電子穿隧的機率。本論文最後的部分，利用氧化銦錫導電的特性，做為奈米線電阻式記憶體的應用，研究次微米尺度下記憶體電阻轉換表現，藉由氧化銦錫/氧化鉿核殼結構奈米線並利用黃光微影的定義方式製備單一奈米線元件進行量測，顯示傳導路徑可經由氧化銦錫奈米線連接至氧化鉿殼層，並在殼層展現電阻轉換特性，其操作耐久性與穩定性皆可與薄膜元件表現相比較，可說明氧化銦錫/氧化鉿核殼奈米線具有在高密度堆疊記憶元件的應用潛力。

關鍵字

氧化銦錫 ； 奈米線 ； 原子層化學氣相沉積 ； 電子場發射 ； 電阻式記憶體

並列摘要

The thesis includes four parts. In the first two parts, the researches mainly focus on the properties of ITO nanowires. The applications of ITO/(ZnO-HfO2) core-shell nanowires are discussed in the third and fourth parts. For the properties of ITO nanowires, different sizes of Au nanoparticles were used to synthesize the nanowires with well controlled diameters. It is found that the resistivity is influenced by different diameters of ITO NWs controlled by different sizes of Au NPs. Competition of conductive factors such as Sn ions and oxygen vacancy confirmed by the X-ray photoemission spectra (XPS) analyses were investigated and discussed at different diameters of ITO NWs. In the secondary part of the thesis, the screen effect of ITO NWs was discussed. By selective area growth of ITO nanowires patterned by grid, the length and the density of ITO NWs can be controlled, diminishing the screen effect so as to enhance field emission properties, namely less the threshold filed. In the third part of thesis, the ITO/ZnO and ITO/HfO2/ZnO core-shell nanowires were synthesized by atomic layer deposition (ALD), which are found to enhance the field-emission property. The distribution of nanocrystals and oxygen deficient states were investigated and characterized by TEM and X-ray photoemission spectra (XPS). In the final part of the thesis, ITO/HfO2 core-shell nanowires were applied for resistive change memory (RRAM). Interesting, the electrical performance of ITO/HfO2 core-shell nanowire shows can be improved, compared with thin film device. Finally, complementary resistive switching (CRS) was demonstrated, making fabrication of future high-density resistive memory devices possible.

並列關鍵字

ITO ； nanowire ； ALD ； Field Emission ； RRAM

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