含氮三五族半導體雷射結構的光學躍遷

Optical Transitions of (III-V-N) Semiconductor Laser structures

吳政翰

指導教授 ： 陸健榮

國立臺灣師範大學/理學院/物理學系在職進修碩士班/碩士(2002年)

摘要

我們分別以光調制反射實驗(PR)和光激螢光實驗(PL)來研究由分子束磊晶法(MBE)所長成的一系列含氮三五族半導體雷射結構樣品，此系列的特徵是都含 。並加以比較有無熱退火處理對實驗譜圖的影響和GaAsN緩衝層對樣品間實驗譜圖的影響。
樣品由於應力對能帶結構的影響，實驗結果觀察到受應力作用後的躍遷能量，我們並利用MATLAB程式推算出量子井的躍遷能量，計算所得躍遷能量到的也符合調制光譜的實驗結果。接下來我們將所得的能量本徵值帶回原轉換矩陣，可求得樣品的電子能級波函數，並探討波函數和調制光譜實驗譜形的關係。

關鍵字

氮砷化鎵銦 ； 量子井 ； 光調制反射實驗 ； 光激螢光實驗 ； 波函數

並列摘要

We have investigated (III-V-N) semiconductor laser structures grown by Molecular Beam Epitaxy (MBE) using photoreflectance and photoluminescence at various temperatures. The investigated laser structures all contain quantum well, and some of them have buffer layers. We have studied effects of rapid thermal annealing and buffer layer on the optical properties.
All the principal optical transitions in strained (III-V-N) semiconductor laser structures were analyzed. The matrix transfer algorithm was used to calculate transition energies and electronic wavefunctions of the quantum well. The transitions involving the confined quantum states are compared with observed spectral features. The distribution of the calculated electronic wavefunction may explain the intensity variation of the spectral features.

參考文獻

1. Appl. phys. Lett. Vol. 75 , 4. 26 July 1999

2. Jpn. J. Appl. Phys. 31 (1992) Pt. 2,No.7A

4. Solid State Communications 112 (1999) 443-447

7. Shunichi Sato, “Low Threshold and High Characteristic Temperatuer 1.3μm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition”, Jpn. J. Appl. Phys., Vol. 39, pp. 3403-3405 (2000).

8. Z. Pan, L. H. Li, Y. W. Lin, B. Q. Sun, and D. S. Jiang, “Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration”, Appl. Phys. Lett., Vol. 78, pp. 2217-2219 (2001).