我們研究了次單層的鈷在矽(111)基底上島形隨溫度的變化情形。實驗的進行是在超高真空的環境下,於潔淨的Si(111)7x7表面上分別鍍上鍍量為0.29ML、0.41ML、0.52ML、0.71ML以及0.82ML的鈷。並分別加熱樣品至600℃、700℃、800℃以及900℃的溫度後,再利用掃描穿隧式顯微鏡(STM)和低能量電子繞射儀(LEED)觀察表面上的結構變化情形。 實驗結果發現,矽鈷系統的反應非常的複雜。觀察到許多特別的結構,例如pinhole結構、雲狀島嶼、三角形島嶼等等。 我們發現這些結構對於鍍量和溫度這兩個因子十分的敏感。此外在同一個條件下,表面上不一定只會產生一種矽鈷化合物,可能同時會有兩種以上的矽鈷化合物存在。且在溫度上升到700℃後,這些矽鈷化合物有往基底底層作用的趨勢。
Transformation of cluster shape for Co adatoms on Si(111)7x7 surface after plating Co on basis with coverage of 0.29ML、0.41ML、0.52ML、0.71ML and 0.82ML was studied in UHV. The samples were treated at different temperature such as 600℃、700℃、800℃ and 900℃ by LEED (Low Energy Electron Diffraction) and STM (Scanning Tunneling Microscopy). The result shows that the reaction of Co-Si system is very complicated. Some special surface structures such as Pinhole、cloudy islands、triangular islands、clustered islands was observed. We find two factors, coverage of Co on basis and annealing temperature, take great influence on the transformation of surface structure and cluster shape. Sometimes, more than one kind of Co-Si alloy on the surface coexists. Furthermore, those Co-Si compounds have the tendency to spread toward the internal part of substrate after annealing to 700℃.